Résumé
We demonstrate passive mode locking in one-section monolithic semiconductor laser diodes based on quantum-dash active layer at very high repetition rate in the 1.5 μm window. Transform-limited pulses are generated at 134 GHz with subpicosecond width, without any pulse compression scheme. A 50 kHz linewidth of the radio-frequency spectrum is also demonstrated at 42 GHz, the lowest value reported for any passively mode-locked semiconductor laser. We further show that the saturable absorption section in two-section devices has no significant impact on the mode-locking behavior.
| langue originale | Anglais |
|---|---|
| Numéro d'article | 241105 |
| journal | Applied Physics Letters |
| Volume | 88 |
| Numéro de publication | 24 |
| Les DOIs | |
| état | Publié - 12 juin 2006 |
| Modification externe | Oui |
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