Suppression of leakage current in Schottky barrier metal-oxide-semiconductor field-effect transistors

In this article we investigate the subthreshold behavior of PtSi source/drain Schottky barrier metal-oxide-semiconductor field-effect transistors. We demonstrate very large on/off ratios on bulk silicon devices and show that slight process variations can result in anomalous leakage paths that degrade the subthreshold swing and complicate investigations of device scaling.