Surface reactions of silane with oxidized InP and their application to the improvement of chemical vapor deposition grown, InP-based metal-insulator- semiconductor devices

C. Licoppe; J. M. Moison; Y. I. Nissim; J. L. Regolini; D. Bensahel

doi:10.1063/1.100426

Surface reactions of silane with oxidized InP and their application to the improvement of chemical vapor deposition grown, InP-based metal-insulator- semiconductor devices

C. Licoppe
, J. M. Moison
, Y. I. Nissim
, J. L. Regolini
, D. Bensahel

Orange Labs

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

The first stage of chemical vapor deposition of SiO₂ from SiH₄ and O₂ on InP has been investigated. SiH₄ is shown to interact only with an oxidized InP surface. It plays the part of an interface deoxidizing agent, restoring the covalent bonding of surface InP atoms. Oxygen originally bonded to InP becomes bonded to the silicon deposit in silica-like bonds. This phenomenon has been used as an in situ surface cleaning step in the processing of metal-insulator-semiconductor InP structures. It leads to a strong decrease of the hysteresis in capacitance-voltage curves, demonstrating improvement of the interface properties.

langue originale	Anglais
Pages (de - à)	1291-1293
Nombre de pages	3
journal	Applied Physics Letters
Volume	53
Numéro de publication	14
Les DOIs	https://doi.org/10.1063/1.100426
état	Publié - 1 janv. 1988
Modification externe	Oui

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10.1063/1.100426

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@article{b9300f31110c4574a7b2de2dbc6d79d0,

title = "Surface reactions of silane with oxidized InP and their application to the improvement of chemical vapor deposition grown, InP-based metal-insulator- semiconductor devices",

abstract = "The first stage of chemical vapor deposition of SiO2 from SiH4 and O2 on InP has been investigated. SiH4 is shown to interact only with an oxidized InP surface. It plays the part of an interface deoxidizing agent, restoring the covalent bonding of surface InP atoms. Oxygen originally bonded to InP becomes bonded to the silicon deposit in silica-like bonds. This phenomenon has been used as an in situ surface cleaning step in the processing of metal-insulator-semiconductor InP structures. It leads to a strong decrease of the hysteresis in capacitance-voltage curves, demonstrating improvement of the interface properties.",

author = "C. Licoppe and Moison, \{J. M.\} and Nissim, \{Y. I.\} and Regolini, \{J. L.\} and D. Bensahel",

year = "1988",

month = jan,

day = "1",

doi = "10.1063/1.100426",

language = "English",

volume = "53",

pages = "1291--1293",

journal = "Applied Physics Letters",

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}

Surface reactions of silane with oxidized InP and their application to the improvement of chemical vapor deposition grown, InP-based metal-insulator- semiconductor devices. / Licoppe, C.; Moison, J. M.; Nissim, Y. I. et al.
Dans: Applied Physics Letters, Vol 53, Numéro 14, 01.01.1988, p. 1291-1293.

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

TY - JOUR

T1 - Surface reactions of silane with oxidized InP and their application to the improvement of chemical vapor deposition grown, InP-based metal-insulator- semiconductor devices

AU - Licoppe, C.

AU - Moison, J. M.

AU - Nissim, Y. I.

AU - Regolini, J. L.

AU - Bensahel, D.

PY - 1988/1/1

Y1 - 1988/1/1

N2 - The first stage of chemical vapor deposition of SiO2 from SiH4 and O2 on InP has been investigated. SiH4 is shown to interact only with an oxidized InP surface. It plays the part of an interface deoxidizing agent, restoring the covalent bonding of surface InP atoms. Oxygen originally bonded to InP becomes bonded to the silicon deposit in silica-like bonds. This phenomenon has been used as an in situ surface cleaning step in the processing of metal-insulator-semiconductor InP structures. It leads to a strong decrease of the hysteresis in capacitance-voltage curves, demonstrating improvement of the interface properties.

AB - The first stage of chemical vapor deposition of SiO2 from SiH4 and O2 on InP has been investigated. SiH4 is shown to interact only with an oxidized InP surface. It plays the part of an interface deoxidizing agent, restoring the covalent bonding of surface InP atoms. Oxygen originally bonded to InP becomes bonded to the silicon deposit in silica-like bonds. This phenomenon has been used as an in situ surface cleaning step in the processing of metal-insulator-semiconductor InP structures. It leads to a strong decrease of the hysteresis in capacitance-voltage curves, demonstrating improvement of the interface properties.

U2 - 10.1063/1.100426

DO - 10.1063/1.100426

M3 - Article

AN - SCOPUS:36549093191

SN - 0003-6951

VL - 53

SP - 1291

EP - 1293

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Surface reactions of silane with oxidized InP and their application to the improvement of chemical vapor deposition grown, InP-based metal-insulator- semiconductor devices

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