Synchrotron radiation and conventional x-ray source photoemission studies of γ-Al2O3 thin films grown on Si(111) and Si(001) substrates by molecular beam epitaxy

M. El Kazzi; C. Merckling; G. Grenet; G. Saint-Girons; M. Silly; F. Sirotti; G. Hollinger

doi:10.1557/proc-1155-c08-05

Synchrotron radiation and conventional x-ray source photoemission studies of γ-Al₂O₃ thin films grown on Si(111) and Si(001) substrates by molecular beam epitaxy

M. El Kazzi
, C. Merckling
, G. Grenet
, G. Saint-Girons
, M. Silly
, F. Sirotti
, G. Hollinger

Synchrotron SOLEIL
Imec
LTDS UMR 5513 - Ecole Centrale de Lyon

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Contribution à une conférence › Revue par des pairs

Résumé

High-resolution synchrotron radiation X-ray photoelectron spectroscopy (HRXPS) is used to study the chemical bonding at the Al₂O ₃/Si(001) and Al₂O₃/Si(111) interfaces. In both cases, the Si2p spectra recorded at 180 eV photon energy provides evidence a thin interfacial layer rich in Si-O bonding. On the other hand, conventional AlK_α X-ray source angular measurements clearly indicate that there are two in-plane orientations for Al₂O₃/Si(111) : [11-2]Al₂O₃(111)//[11-2]Si(111) and [-1-12] Al ₂O₃(111)//[11-2]Si(111) but four in-plane orientations for Al₂O₃/Si(001) : [11-2] Al₂O ₃(111)//[100]Si(001), [11-2]Al₂O₃(111)//[010] Si(001), [11-2]Al₂O₃(111)//[-100]Si(001), and [11-2]Al₂O₃(111)//[0-10]Si(001).

langue originale	Anglais
titre	CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications
Editeur	Materials Research Society
Pages	29-33
Nombre de pages	5
ISBN (imprimé)	9781605111285
Les DOIs	https://doi.org/10.1557/proc-1155-c08-05
état	Publié - 1 janv. 2009
Modification externe	Oui
Evénement	2009 MRS Spring Meeting - San Francisco, CA, États-Unis Durée: 13 avr. 2009 → 17 avr. 2009

Série de publications

Nom	Materials Research Society Symposium Proceedings
Volume	1155
ISSN (imprimé)	0272-9172

Une conférence

Une conférence	2009 MRS Spring Meeting
Pays/Territoire	États-Unis
La ville	San Francisco, CA
période	13/04/09 → 17/04/09

Accès au document

10.1557/proc-1155-c08-05

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Contient cette citation

El Kazzi, M., Merckling, C., Grenet, G., Saint-Girons, G., Silly, M., Sirotti, F., & Hollinger, G. (2009). Synchrotron radiation and conventional x-ray source photoemission studies of γ-Al₂O₃ thin films grown on Si(111) and Si(001) substrates by molecular beam epitaxy. Dans CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications (p. 29-33). (Materials Research Society Symposium Proceedings; Vol 1155). Materials Research Society. https://doi.org/10.1557/proc-1155-c08-05

El Kazzi, M. ; Merckling, C. ; Grenet, G. et al. / Synchrotron radiation and conventional x-ray source photoemission studies of γ-Al₂O₃ thin films grown on Si(111) and Si(001) substrates by molecular beam epitaxy. CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications. Materials Research Society, 2009. p. 29-33 (Materials Research Society Symposium Proceedings).

@inproceedings{463a941c808641bc91035209f19d1a19,

title = "Synchrotron radiation and conventional x-ray source photoemission studies of γ-Al2O3 thin films grown on Si(111) and Si(001) substrates by molecular beam epitaxy",

abstract = "High-resolution synchrotron radiation X-ray photoelectron spectroscopy (HRXPS) is used to study the chemical bonding at the Al2O 3/Si(001) and Al2O3/Si(111) interfaces. In both cases, the Si2p spectra recorded at 180 eV photon energy provides evidence a thin interfacial layer rich in Si-O bonding. On the other hand, conventional AlKα X-ray source angular measurements clearly indicate that there are two in-plane orientations for Al2O3/Si(111) : [11-2]Al2O3(111)//[11-2]Si(111) and [-1-12] Al 2O3(111)//[11-2]Si(111) but four in-plane orientations for Al2O3/Si(001) : [11-2] Al2O 3(111)//[100]Si(001), [11-2]Al2O3(111)//[010] Si(001), [11-2]Al2O3(111)//[-100]Si(001), and [11-2]Al2O3(111)//[0-10]Si(001).",

author = "\{El Kazzi\}, M. and C. Merckling and G. Grenet and G. Saint-Girons and M. Silly and F. Sirotti and G. Hollinger",

year = "2009",

month = jan,

day = "1",

doi = "10.1557/proc-1155-c08-05",

language = "English",

isbn = "9781605111285",

series = "Materials Research Society Symposium Proceedings",

publisher = "Materials Research Society",

pages = "29--33",

booktitle = "CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications",

note = "2009 MRS Spring Meeting ; Conference date: 13-04-2009 Through 17-04-2009",

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El Kazzi, M, Merckling, C, Grenet, G, Saint-Girons, G, Silly, M, Sirotti, F & Hollinger, G 2009, Synchrotron radiation and conventional x-ray source photoemission studies of γ-Al₂O₃ thin films grown on Si(111) and Si(001) substrates by molecular beam epitaxy. Dans CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications. Materials Research Society Symposium Proceedings, VOL. 1155, Materials Research Society, p. 29-33, 2009 MRS Spring Meeting, San Francisco, CA, États-Unis, 13/04/09. https://doi.org/10.1557/proc-1155-c08-05

Synchrotron radiation and conventional x-ray source photoemission studies of γ-Al₂O₃ thin films grown on Si(111) and Si(001) substrates by molecular beam epitaxy. / El Kazzi, M.; Merckling, C.; Grenet, G. et al.
CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications. Materials Research Society, 2009. p. 29-33 (Materials Research Society Symposium Proceedings; Vol 1155).

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Contribution à une conférence › Revue par des pairs

TY - GEN

T1 - Synchrotron radiation and conventional x-ray source photoemission studies of γ-Al2O3 thin films grown on Si(111) and Si(001) substrates by molecular beam epitaxy

AU - El Kazzi, M.

AU - Merckling, C.

AU - Grenet, G.

AU - Saint-Girons, G.

AU - Silly, M.

AU - Sirotti, F.

AU - Hollinger, G.

PY - 2009/1/1

Y1 - 2009/1/1

N2 - High-resolution synchrotron radiation X-ray photoelectron spectroscopy (HRXPS) is used to study the chemical bonding at the Al2O 3/Si(001) and Al2O3/Si(111) interfaces. In both cases, the Si2p spectra recorded at 180 eV photon energy provides evidence a thin interfacial layer rich in Si-O bonding. On the other hand, conventional AlKα X-ray source angular measurements clearly indicate that there are two in-plane orientations for Al2O3/Si(111) : [11-2]Al2O3(111)//[11-2]Si(111) and [-1-12] Al 2O3(111)//[11-2]Si(111) but four in-plane orientations for Al2O3/Si(001) : [11-2] Al2O 3(111)//[100]Si(001), [11-2]Al2O3(111)//[010] Si(001), [11-2]Al2O3(111)//[-100]Si(001), and [11-2]Al2O3(111)//[0-10]Si(001).

AB - High-resolution synchrotron radiation X-ray photoelectron spectroscopy (HRXPS) is used to study the chemical bonding at the Al2O 3/Si(001) and Al2O3/Si(111) interfaces. In both cases, the Si2p spectra recorded at 180 eV photon energy provides evidence a thin interfacial layer rich in Si-O bonding. On the other hand, conventional AlKα X-ray source angular measurements clearly indicate that there are two in-plane orientations for Al2O3/Si(111) : [11-2]Al2O3(111)//[11-2]Si(111) and [-1-12] Al 2O3(111)//[11-2]Si(111) but four in-plane orientations for Al2O3/Si(001) : [11-2] Al2O 3(111)//[100]Si(001), [11-2]Al2O3(111)//[010] Si(001), [11-2]Al2O3(111)//[-100]Si(001), and [11-2]Al2O3(111)//[0-10]Si(001).

UR - https://www.scopus.com/pages/publications/77950978526

U2 - 10.1557/proc-1155-c08-05

DO - 10.1557/proc-1155-c08-05

M3 - Conference contribution

AN - SCOPUS:77950978526

SN - 9781605111285

T3 - Materials Research Society Symposium Proceedings

SP - 29

EP - 33

BT - CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications

PB - Materials Research Society

T2 - 2009 MRS Spring Meeting

Y2 - 13 April 2009 through 17 April 2009

ER -

El Kazzi M, Merckling C, Grenet G, Saint-Girons G, Silly M, Sirotti F et al. Synchrotron radiation and conventional x-ray source photoemission studies of γ-Al₂O₃ thin films grown on Si(111) and Si(001) substrates by molecular beam epitaxy. Dans CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications. Materials Research Society. 2009. p. 29-33. (Materials Research Society Symposium Proceedings). doi: 10.1557/proc-1155-c08-05