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TCT-based monitoring of LGAD radiation hardness for ATLAS-HGTD production

  • I. Velkovska
  • , A. Aboulhorma
  • , M. Ait Tamlihat
  • , H. M. Alfanda
  • , O. Atanova
  • , N. Atanov
  • , I. Azzouzi
  • , J. Barreiro Guimarães da Costa
  • , T. Beau
  • , D. Benchekroun
  • , F. Bendebba
  • , G. Bergamin
  • , Y. Bimgdi
  • , A. Blot
  • , A. Boikov
  • , J. Bonis
  • , D. Boumediene
  • , C. Brito
  • , A. S. Brogna
  • , A. M. Burger
  • L. Cadamuro, Y. Cai, N. Cartalade, R. Casanova Mohr, R. Cherkaoui El Moursli, Y. Che, X. Chen, E. Y.S. Chow, L. D. Corpe, C. G. Crozatier, L. D'Eramo, S. Dahbi, D. Dannheim, G. Daubard, Y. Davydov, J. Debevc, Y. Degerli, E. Delagnes, F. Deliot, M. Dhellot, P. Dinaucourt, G. Di Gregorio, P. J. Dos Santos De Assis, C. Duan, O. Duarte, F. Dulucq, J. Ehrecke, Y. El Ghazali, A. El Moussaouy, A. Falou, L. Fan, Y. Fan, Z. Fan, K. Farman, F. Fassi, Y. Feng, M. Ferreira, F. Filthaut, F. Fischer, P. Fusté, J. Fu, J. Garciía Rodriquez, G. Gaspar De Andrade, V. Gautam, Z. Ge, R. Gonçalo, M. Gouighri, S. Grinstein, K. Gritsay, F. Guilloux, S. Guindon, A. Haddad, S. E.D. Hammoud, L. Han, A. M. Henriques Correia, M. Hidaoui, B. Hiti, J. Hofner, S. Hou, X. Huang, Y. Huang, K. Hu, C. Insa, J. Jeglot, X. Jia, G. Kramberger, M. Kuriyama, B. Y. Ky, D. Lacour, A. Lafarge, B. Lakssir, A. Lantheaume, D. Laporte, C. de La Taille, M. A.L. Leite, A. Leopold, H. Li, L. Li, M. Li, S. Li, S. Li, Y. Li, Z. Li, S. Liang, Z. Liang, B. Liu, K. Liu, K. Liu, Y. L. Liu, Y. W. Liu, F. L. Lucio Alves, M. Lu, Y. J. Lu, F. Lyu, D. Macina, R. Madar, N. Makovec, S. Malyukov, I. Mandić, T. Manoussos, S. Manzoni, G. Martin-Chassard, F. Martins, L. Masetti, R. Mazini, E. Mazzeo, K. Ma, X. Ma, R. Menegasso, J. P. Meyer, Y. Miao, A. Migayron, M. Mihovilovic, M. Milovanovic, M. Missio, V. Moskalenko, N. Mouadili, A. Moussa, I. Nikolic-Audit, C. C. Ohm, H. Okawa, S. Okkerman, M. Ouchrif, C. Pénélaud, A. Parreira, B. Pascual Dias, R. E. de Paula, J. Pinol Bel, P. O. Puhl, C. Puigdengoles Olive, M. Puklavec, J. Qin, M. Qi, H. Ren, H. Riani, S. Ridouani, V. Rogozin, L. Royer, F. Rudnyckyj, E. F. Saad, G. T. Saito, A. Salem, H. Santos, S. Scarfi, Ph Schwemling, N. Seguin-Moreau, L. Serin, R. P. Serrano Fernandez, A. Shaikovskii, Q. Sha, L. Shan, R. Shen, X. Shi, P. Skomina, H. Smitmanns, H. L. Snoek, A. P. Soulier, A. Stein, H. Stenzel, J. Strandberg, W. Sun, X. Sun, Y. Sun, Y. Tan, K. Tariq, Y. Tayalati, S. Terzo, A. Torrento Coello, S. Trincaz-Duvoid, U. M. Vande Voorde, R. V. Vieira, L. A. Vieira Lopes, A. Visibile, A. Wang, C. Wang, S. M. Wang, T. Wang, T. Wang, W. Wang, Y. Wang, Y. Wang, J. Wan, Q. Weitzel, J. Wu, M. Wu, W. Wu, Y. Wu, L. Xia, D. Xu, H. Xu, L. Xu, Z. Yan, H. Yang, H. Yang, X. Yang, X. Yang, J. Ye, I. Youbi, J. Yuan, I. Zahir, H. Zeng, D. Zhang, J. Zhang, L. Zhang, Z. Zhang, M. Zhao, Z. Zhao, X. Zheng, Z. Zhou, Y. Zhu, X. Zhuang
  • University of Ljubljana
  • Faculté des Sciences Rabat
  • Shanghai Jiao Tong University
  • European Organization for Nuclear Research
  • Moroccan Foundation for Advanced Science Innovation and Research (MAScIR)
  • Institute of High Energy Physics, Chinese Academy of Sciences
  • Sorbonne Université
  • Université Hassan II
  • Mohammed VI Polytechnic University
  • Université Paris-Saclay
  • Clermont-Auvergne University
  • Lisboa
  • Johannes Gutenberg University
  • Nanjing University
  • The Barcelona Institute of Science and Technology
  • Radboud University
  • Academia Sinica, Institute Of Physics
  • University of Science and Technology of China
  • Université Ibn-Tofail
  • University of Chinese Academy of Sciences
  • Shandong University
  • University of São Paulo
  • KTH Royal Institute of Technology
  • University of the Witwatersrand, Johannesburg
  • Justus-Liebig-Universität Giessen
  • Université Mohamed Premier
  • Faculdade de Ciências, Universidade de Lisboa
  • University of Amsterdam

Résultats de recherche: Contribution à un journalArticleRevue par des pairs

Résumé

Production of the High Granularity Timing Detector for the ATLAS experiment at High Luminosity LHC requires over 21000 silicon sensors based on Low Gain Avalanche Diode (LGAD) technology. Their radiation hardness is monitored as a part of the production quality control. Dedicated test structures from each wafer are irradiated with neutrons and a fast and comprehensive characterization is required. We introduce a new test method based on Transient Current Technique (TCT) performed in the interface region of two LGAD devices. The measurement enables extraction of numerous sensor performance parameters, such as LGAD gain layer depletion voltage, LGAD gain dependence on bias voltage, sensor leakage current and effective interpad distance. Complementary capacitance-voltage measurements and charge collection measurements with 90Sr on the same samples have been performed to calibrate the TCT results in terms of charge collection and define acceptance criteria for wafer radiation hardness in the ATLAS-HGTD project.

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