Temperature insensitive linewidth enhancement factor of p -type doped InAsGaAs quantum-dot lasers emitting at 1.3 μm

D. Y. Cong; A. Martinez; K. Merghem; A. Ramdane; J. G. Provost; M. Fischer; I. Krestnikov; A. Kovsh

doi:10.1063/1.2929384

Temperature insensitive linewidth enhancement factor of p -type doped InAsGaAs quantum-dot lasers emitting at 1.3 μm

D. Y. Cong
, A. Martinez
, K. Merghem
, A. Ramdane
, J. G. Provost
, M. Fischer
, I. Krestnikov
, A. Kovsh

CNRS
Research and Invovation Department
Nanoplus Nanosystems and Technologies GmbH
Innolume GmbH

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

The temperature dependence of microwave properties-relaxation frequency and Henry factor-of undoped and p -type doped ten InAsGaAs quantum-dot layer lasers is reported in the 20-80 °C range. It is shown that the linewidth enhancement factor of the p -type doped devices is temperature insensitive while that of the undoped lasers shows a strong dependence for temperatures above 40 °C.

langue originale	Anglais
Numéro d'article	191109
journal	Applied Physics Letters
Volume	92
Numéro de publication	19
Les DOIs	https://doi.org/10.1063/1.2929384
état	Publié - 27 mai 2008

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10.1063/1.2929384

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title = "Temperature insensitive linewidth enhancement factor of p -type doped InAsGaAs quantum-dot lasers emitting at 1.3 μm",

abstract = "The temperature dependence of microwave properties-relaxation frequency and Henry factor-of undoped and p -type doped ten InAsGaAs quantum-dot layer lasers is reported in the 20-80 °C range. It is shown that the linewidth enhancement factor of the p -type doped devices is temperature insensitive while that of the undoped lasers shows a strong dependence for temperatures above 40 °C.",

author = "Cong, \{D. Y.\} and A. Martinez and K. Merghem and A. Ramdane and Provost, \{J. G.\} and M. Fischer and I. Krestnikov and A. Kovsh",

year = "2008",

month = may,

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doi = "10.1063/1.2929384",

language = "English",

volume = "92",

journal = "Applied Physics Letters",

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T1 - Temperature insensitive linewidth enhancement factor of p -type doped InAsGaAs quantum-dot lasers emitting at 1.3 μm

AU - Cong, D. Y.

AU - Martinez, A.

AU - Merghem, K.

AU - Ramdane, A.

AU - Provost, J. G.

AU - Fischer, M.

AU - Krestnikov, I.

AU - Kovsh, A.

PY - 2008/5/27

Y1 - 2008/5/27

N2 - The temperature dependence of microwave properties-relaxation frequency and Henry factor-of undoped and p -type doped ten InAsGaAs quantum-dot layer lasers is reported in the 20-80 °C range. It is shown that the linewidth enhancement factor of the p -type doped devices is temperature insensitive while that of the undoped lasers shows a strong dependence for temperatures above 40 °C.

AB - The temperature dependence of microwave properties-relaxation frequency and Henry factor-of undoped and p -type doped ten InAsGaAs quantum-dot layer lasers is reported in the 20-80 °C range. It is shown that the linewidth enhancement factor of the p -type doped devices is temperature insensitive while that of the undoped lasers shows a strong dependence for temperatures above 40 °C.

UR - https://www.scopus.com/pages/publications/44049095153

U2 - 10.1063/1.2929384

DO - 10.1063/1.2929384

M3 - Article

AN - SCOPUS:44049095153

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

M1 - 191109

ER -

Temperature insensitive linewidth enhancement factor of p -type doped InAsGaAs quantum-dot lasers emitting at 1.3 μm

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