Tensile-strained germanium microdisks using Si3N4 stressors

M. El Kurdi; A. Ghrib; M. De Kersauson; M. Prost; S. Sauvage; X. Checoury; G. Beaudoin; I. Sagnes; G. Ndong; M. Chaigneau; R. Ossikovski; P. Boucaud

doi:10.1109/Group4.2013.6644443

Tensile-strained germanium microdisks using Si₃N₄ stressors

M. El Kurdi
, A. Ghrib
, M. De Kersauson
, M. Prost
, S. Sauvage
, X. Checoury
, G. Beaudoin
, I. Sagnes
, G. Ndong
, M. Chaigneau
, R. Ossikovski
, P. Boucaud

CNRS
STMicroelectronics SA, France
Centre de Nanosciences et de Nanotechnologies
Institut polytechnique de Paris

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Contribution à une conférence › Revue par des pairs

1 Citation (Scopus)

Résumé

A strong tensile strain (1% biaxial) is applied to germanium microdisks using silicon nitride stressors. Both Fabry-Perot and whispering gallery modes are observed with quality factors up to 1350 limited by free carrier absorption.

langue originale	Anglais
titre	2013 IEEE 10th International Conference on Group IV Photonics, GFP 2013
Pages	95-96
Nombre de pages	2
Les DOIs	https://doi.org/10.1109/Group4.2013.6644443
état	Publié - 31 déc. 2013
Evénement	2013 IEEE 10th International Conference on Group IV Photonics, GFP 2013 - Seoul, Corée du Sud Durée: 28 août 2013 → 30 août 2013

Série de publications

Nom	IEEE International Conference on Group IV Photonics GFP
ISSN (imprimé)	1949-2081

Une conférence

Une conférence	2013 IEEE 10th International Conference on Group IV Photonics, GFP 2013
Pays/Territoire	Corée du Sud
La ville	Seoul
période	28/08/13 → 30/08/13

Accès au document

10.1109/Group4.2013.6644443

Contient cette citation

El Kurdi, M., Ghrib, A., De Kersauson, M., Prost, M., Sauvage, S., Checoury, X., Beaudoin, G., Sagnes, I., Ndong, G., Chaigneau, M., Ossikovski, R., & Boucaud, P. (2013). Tensile-strained germanium microdisks using Si₃N₄ stressors. Dans 2013 IEEE 10th International Conference on Group IV Photonics, GFP 2013 (p. 95-96). Article 6644443 (IEEE International Conference on Group IV Photonics GFP). https://doi.org/10.1109/Group4.2013.6644443

@inproceedings{18f1a0e571754857a3315bf8e970275b,

title = "Tensile-strained germanium microdisks using Si3N4 stressors",

abstract = "A strong tensile strain (1\% biaxial) is applied to germanium microdisks using silicon nitride stressors. Both Fabry-Perot and whispering gallery modes are observed with quality factors up to 1350 limited by free carrier absorption.",

author = "\{El Kurdi\}, M. and A. Ghrib and \{De Kersauson\}, M. and M. Prost and S. Sauvage and X. Checoury and G. Beaudoin and I. Sagnes and G. Ndong and M. Chaigneau and R. Ossikovski and P. Boucaud",

year = "2013",

month = dec,

day = "31",

doi = "10.1109/Group4.2013.6644443",

language = "English",

isbn = "9781467358040",

series = "IEEE International Conference on Group IV Photonics GFP",

pages = "95--96",

booktitle = "2013 IEEE 10th International Conference on Group IV Photonics, GFP 2013",

note = "2013 IEEE 10th International Conference on Group IV Photonics, GFP 2013 ; Conference date: 28-08-2013 Through 30-08-2013",

}

El Kurdi, M, Ghrib, A, De Kersauson, M, Prost, M, Sauvage, S, Checoury, X, Beaudoin, G, Sagnes, I, Ndong, G, Chaigneau, M, Ossikovski, R & Boucaud, P 2013, Tensile-strained germanium microdisks using Si₃N₄ stressors. Dans 2013 IEEE 10th International Conference on Group IV Photonics, GFP 2013., 6644443, IEEE International Conference on Group IV Photonics GFP, p. 95-96, 2013 IEEE 10th International Conference on Group IV Photonics, GFP 2013, Seoul, Corée du Sud, 28/08/13. https://doi.org/10.1109/Group4.2013.6644443

Tensile-strained germanium microdisks using Si₃N₄ stressors. / El Kurdi, M.; Ghrib, A.; De Kersauson, M. et al.
2013 IEEE 10th International Conference on Group IV Photonics, GFP 2013. 2013. p. 95-96 6644443 (IEEE International Conference on Group IV Photonics GFP).

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Contribution à une conférence › Revue par des pairs

TY - GEN

T1 - Tensile-strained germanium microdisks using Si3N4 stressors

AU - El Kurdi, M.

AU - Ghrib, A.

AU - De Kersauson, M.

AU - Prost, M.

AU - Sauvage, S.

AU - Checoury, X.

AU - Beaudoin, G.

AU - Sagnes, I.

AU - Ndong, G.

AU - Chaigneau, M.

AU - Ossikovski, R.

AU - Boucaud, P.

PY - 2013/12/31

Y1 - 2013/12/31

N2 - A strong tensile strain (1% biaxial) is applied to germanium microdisks using silicon nitride stressors. Both Fabry-Perot and whispering gallery modes are observed with quality factors up to 1350 limited by free carrier absorption.

AB - A strong tensile strain (1% biaxial) is applied to germanium microdisks using silicon nitride stressors. Both Fabry-Perot and whispering gallery modes are observed with quality factors up to 1350 limited by free carrier absorption.

U2 - 10.1109/Group4.2013.6644443

DO - 10.1109/Group4.2013.6644443

M3 - Conference contribution

AN - SCOPUS:84891112008

SN - 9781467358040

T3 - IEEE International Conference on Group IV Photonics GFP

SP - 95

EP - 96

BT - 2013 IEEE 10th International Conference on Group IV Photonics, GFP 2013

T2 - 2013 IEEE 10th International Conference on Group IV Photonics, GFP 2013

Y2 - 28 August 2013 through 30 August 2013

ER -