The kinetics of light-induced defect creation in hydrogenated polymorphous silicon - Stretched exponential relaxation

K. Morigaki; H. Hikita; K. Takeda; P. Roca I Cabarrocas

doi:10.1002/pssc.200982683

The kinetics of light-induced defect creation in hydrogenated polymorphous silicon - Stretched exponential relaxation

K. Morigaki
, H. Hikita
, K. Takeda
, P. Roca I Cabarrocas

Hiroshima Institute of Technology
Meikai University
Electro-Chemical and Cancer Institute

Résultats de recherche: Contribution à un journal › Article de conférence › Revue par des pairs

3 Citations (Scopus)

Résumé

The growing curve of light-induced dangling bonds under illumination has been observed for various intensities of illumination in hydrogenated polymorphous silicon. It is fitted to a stretched exponential function with two parameters β and τ. The experimental results on the values of β and τ, as functions of saturated dangling bond density N_ss are compared with those calculated on the basis of our model for light-induced defect creation in a-Si:H. This comparison as well as the experimental result on saturated dangling bond density as a function of generation rate of free carriers is consistent with our model.

langue originale	Anglais
Pages (de - à)	692-695
Nombre de pages	4
journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	7
Numéro de publication	3-4
Les DOIs	https://doi.org/10.1002/pssc.200982683
état	Publié - 27 mai 2010
Evénement	23rd International Conference on Amorphous and Nanocrystalline Semiconductors, ICANS23 - Utrecht, Pays-Bas Durée: 23 août 2009 → 28 août 2009

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10.1002/pssc.200982683

Contient cette citation

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title = "The kinetics of light-induced defect creation in hydrogenated polymorphous silicon - Stretched exponential relaxation",

abstract = "The growing curve of light-induced dangling bonds under illumination has been observed for various intensities of illumination in hydrogenated polymorphous silicon. It is fitted to a stretched exponential function with two parameters β and τ. The experimental results on the values of β and τ, as functions of saturated dangling bond density Nss are compared with those calculated on the basis of our model for light-induced defect creation in a-Si:H. This comparison as well as the experimental result on saturated dangling bond density as a function of generation rate of free carriers is consistent with our model.",

author = "K. Morigaki and H. Hikita and K. Takeda and \{Roca I Cabarrocas\}, P.",

year = "2010",

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language = "English",

volume = "7",

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journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

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note = "23rd International Conference on Amorphous and Nanocrystalline Semiconductors, ICANS23 ; Conference date: 23-08-2009 Through 28-08-2009",

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The kinetics of light-induced defect creation in hydrogenated polymorphous silicon - Stretched exponential relaxation. / Morigaki, K.; Hikita, H.; Takeda, K. et al.
Dans: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol 7, Numéro 3-4, 27.05.2010, p. 692-695.

Résultats de recherche: Contribution à un journal › Article de conférence › Revue par des pairs

TY - JOUR

T1 - The kinetics of light-induced defect creation in hydrogenated polymorphous silicon - Stretched exponential relaxation

AU - Morigaki, K.

AU - Hikita, H.

AU - Takeda, K.

AU - Roca I Cabarrocas, P.

PY - 2010/5/27

Y1 - 2010/5/27

N2 - The growing curve of light-induced dangling bonds under illumination has been observed for various intensities of illumination in hydrogenated polymorphous silicon. It is fitted to a stretched exponential function with two parameters β and τ. The experimental results on the values of β and τ, as functions of saturated dangling bond density Nss are compared with those calculated on the basis of our model for light-induced defect creation in a-Si:H. This comparison as well as the experimental result on saturated dangling bond density as a function of generation rate of free carriers is consistent with our model.

AB - The growing curve of light-induced dangling bonds under illumination has been observed for various intensities of illumination in hydrogenated polymorphous silicon. It is fitted to a stretched exponential function with two parameters β and τ. The experimental results on the values of β and τ, as functions of saturated dangling bond density Nss are compared with those calculated on the basis of our model for light-induced defect creation in a-Si:H. This comparison as well as the experimental result on saturated dangling bond density as a function of generation rate of free carriers is consistent with our model.

U2 - 10.1002/pssc.200982683

DO - 10.1002/pssc.200982683

M3 - Conference article

AN - SCOPUS:77952577696

SN - 1862-6351

VL - 7

SP - 692

EP - 695

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

IS - 3-4

T2 - 23rd International Conference on Amorphous and Nanocrystalline Semiconductors, ICANS23

Y2 - 23 August 2009 through 28 August 2009

ER -

The kinetics of light-induced defect creation in hydrogenated polymorphous silicon - Stretched exponential relaxation

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