The role of hydrogen in the formation of microcrystalline silicon

A. Fontcuberta i Morral; J. Bertomeu; P. Roca i Cabarrocas

doi:10.1016/S0921-5107(99)00324-4

The role of hydrogen in the formation of microcrystalline silicon

A. Fontcuberta i Morral
, J. Bertomeu
, P. Roca i Cabarrocas

Institut polytechnique de Paris
University of Barcelona

Résultats de recherche: Contribution à un journal › Article de conférence › Revue par des pairs

Résumé

The growth mechanisms of microcrystalline silicon thin films at low temperatures (100-250°C) by plasma CVD are still a matter of debate. We have shown that ue-Si:H formation proceeds through four phases (incubation, nucleation, growth and steady state) and that hydrogen plays a key role in this process, particularly during the incubation phase in which hydrogen modifies the amorphous silicon network and forms a highly porous phase where nucleation takes place. In this study we combine in-situ ellipsometry and dark conductivity measurements with ex-situ high resolution transmission electron microscopy to improve our understanding of microcrystalline silicon formation.

langue originale	Anglais
Pages (de - à)	559-563
Nombre de pages	5
journal	Materials Science and Engineering: B
Volume	69-70
Les DOIs	https://doi.org/10.1016/S0921-5107(99)00324-4
état	Publié - 19 janv. 2000
Modification externe	Oui
Evénement	The European Materials Research Society 1999 Spring Meeting, Symposium I: Microcrystalline and Nanocrystalline Semiconductors - Strasbourg, France Durée: 1 juin 1999 → 4 juin 1999

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10.1016/S0921-5107(99)00324-4

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@article{18b77bdbee1144c4954dd3eb52d4b80f,

title = "The role of hydrogen in the formation of microcrystalline silicon",

abstract = "The growth mechanisms of microcrystalline silicon thin films at low temperatures (100-250°C) by plasma CVD are still a matter of debate. We have shown that ue-Si:H formation proceeds through four phases (incubation, nucleation, growth and steady state) and that hydrogen plays a key role in this process, particularly during the incubation phase in which hydrogen modifies the amorphous silicon network and forms a highly porous phase where nucleation takes place. In this study we combine in-situ ellipsometry and dark conductivity measurements with ex-situ high resolution transmission electron microscopy to improve our understanding of microcrystalline silicon formation.",

keywords = "Hydrogen, Low temperatures, Microcrystalline silicon films",

author = "\{Fontcuberta i Morral\}, A. and J. Bertomeu and \{Roca i Cabarrocas\}, P.",

year = "2000",

month = jan,

day = "19",

doi = "10.1016/S0921-5107(99)00324-4",

language = "English",

volume = "69-70",

pages = "559--563",

journal = "Materials Science and Engineering: B",

issn = "0921-5107",

note = "The European Materials Research Society 1999 Spring Meeting, Symposium I: Microcrystalline and Nanocrystalline Semiconductors ; Conference date: 01-06-1999 Through 04-06-1999",

}

TY - JOUR

T1 - The role of hydrogen in the formation of microcrystalline silicon

AU - Fontcuberta i Morral, A.

AU - Bertomeu, J.

AU - Roca i Cabarrocas, P.

PY - 2000/1/19

Y1 - 2000/1/19

N2 - The growth mechanisms of microcrystalline silicon thin films at low temperatures (100-250°C) by plasma CVD are still a matter of debate. We have shown that ue-Si:H formation proceeds through four phases (incubation, nucleation, growth and steady state) and that hydrogen plays a key role in this process, particularly during the incubation phase in which hydrogen modifies the amorphous silicon network and forms a highly porous phase where nucleation takes place. In this study we combine in-situ ellipsometry and dark conductivity measurements with ex-situ high resolution transmission electron microscopy to improve our understanding of microcrystalline silicon formation.

AB - The growth mechanisms of microcrystalline silicon thin films at low temperatures (100-250°C) by plasma CVD are still a matter of debate. We have shown that ue-Si:H formation proceeds through four phases (incubation, nucleation, growth and steady state) and that hydrogen plays a key role in this process, particularly during the incubation phase in which hydrogen modifies the amorphous silicon network and forms a highly porous phase where nucleation takes place. In this study we combine in-situ ellipsometry and dark conductivity measurements with ex-situ high resolution transmission electron microscopy to improve our understanding of microcrystalline silicon formation.

KW - Hydrogen

KW - Low temperatures

KW - Microcrystalline silicon films

U2 - 10.1016/S0921-5107(99)00324-4

DO - 10.1016/S0921-5107(99)00324-4

M3 - Conference article

AN - SCOPUS:0033907222

SN - 0921-5107

VL - 69-70

SP - 559

EP - 563

JO - Materials Science and Engineering: B

JF - Materials Science and Engineering: B

T2 - The European Materials Research Society 1999 Spring Meeting, Symposium I: Microcrystalline and Nanocrystalline Semiconductors

Y2 - 1 June 1999 through 4 June 1999

ER -

The role of hydrogen in the formation of microcrystalline silicon

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