Thermal dependence of the emission linewidth of 1.52-μm single mode InAs/InP quantum dot lasers

J. Duan; B. Dong; H. Huang; Z. G. Lu; P. J. Poole; F. Grillot

doi:10.1109/ICIPRM.2019.8819315

Thermal dependence of the emission linewidth of 1.52-μm single mode InAs/InP quantum dot lasers

J. Duan
, B. Dong
, H. Huang
, Z. G. Lu
, P. J. Poole
, F. Grillot

CNRS LTCI
National Research Council of Canada
University of New Mexico

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Contribution à une conférence › Revue par des pairs

Résumé

This paper experimentally investigates the thermal dependence of the emission linewidth of 1.52-μm single mode InAs/lnP quantum dot lasers. Using a distributed feedback cavity made with symmetric antireflection coatings, a minimum linewidth of 300 kHz is unveiled. This narrow line is found rather constant with the injection current and the temperature range (293 K - 313 K). However, under certain operating conditions, a linewidth rebroadening is also observed, which may be attributed to the spectral hole burning and to the variations of the alpha-factor with the temperature and bias current. Nevertheless, these results confirm the potential of this technology for manufacturing low-phase noise oscillators for coherent optical communications.

langue originale	Anglais
titre	2019 Compound Semiconductor Week, CSW 2019 - Proceedings
Editeur	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronique)	9781728100807
Les DOIs	https://doi.org/10.1109/ICIPRM.2019.8819315
état	Publié - 1 mai 2019
Modification externe	Oui
Evénement	2019 Compound Semiconductor Week, CSW 2019 - Nara, Japon Durée: 19 mai 2019 → 23 mai 2019

Série de publications

Nom	2019 Compound Semiconductor Week, CSW 2019 - Proceedings

Une conférence

Une conférence	2019 Compound Semiconductor Week, CSW 2019
Pays/Territoire	Japon
La ville	Nara
période	19/05/19 → 23/05/19

Accès au document

10.1109/ICIPRM.2019.8819315

Contient cette citation

Duan, J., Dong, B., Huang, H., Lu, Z. G., Poole, P. J., & Grillot, F. (2019). Thermal dependence of the emission linewidth of 1.52-μm single mode InAs/InP quantum dot lasers. Dans 2019 Compound Semiconductor Week, CSW 2019 - Proceedings Article 8819315 (2019 Compound Semiconductor Week, CSW 2019 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICIPRM.2019.8819315

@inproceedings{61b9ed6e037e49b099209c5fc08bb7c8,

title = "Thermal dependence of the emission linewidth of 1.52-μm single mode InAs/InP quantum dot lasers",

abstract = "This paper experimentally investigates the thermal dependence of the emission linewidth of 1.52-μm single mode InAs/lnP quantum dot lasers. Using a distributed feedback cavity made with symmetric antireflection coatings, a minimum linewidth of 300 kHz is unveiled. This narrow line is found rather constant with the injection current and the temperature range (293 K - 313 K). However, under certain operating conditions, a linewidth rebroadening is also observed, which may be attributed to the spectral hole burning and to the variations of the alpha-factor with the temperature and bias current. Nevertheless, these results confirm the potential of this technology for manufacturing low-phase noise oscillators for coherent optical communications.",

keywords = "Distributed feedback lasers, Quantum dots, rebroadening, spectral linewidth",

author = "J. Duan and B. Dong and H. Huang and Lu, \{Z. G.\} and Poole, \{P. J.\} and F. Grillot",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 Compound Semiconductor Week, CSW 2019 ; Conference date: 19-05-2019 Through 23-05-2019",

year = "2019",

month = may,

day = "1",

doi = "10.1109/ICIPRM.2019.8819315",

language = "English",

series = "2019 Compound Semiconductor Week, CSW 2019 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2019 Compound Semiconductor Week, CSW 2019 - Proceedings",

}

Duan, J, Dong, B, Huang, H, Lu, ZG, Poole, PJ & Grillot, F 2019, Thermal dependence of the emission linewidth of 1.52-μm single mode InAs/InP quantum dot lasers. Dans 2019 Compound Semiconductor Week, CSW 2019 - Proceedings., 8819315, 2019 Compound Semiconductor Week, CSW 2019 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 2019 Compound Semiconductor Week, CSW 2019, Nara, Japon, 19/05/19. https://doi.org/10.1109/ICIPRM.2019.8819315

Thermal dependence of the emission linewidth of 1.52-μm single mode InAs/InP quantum dot lasers. / Duan, J.; Dong, B.; Huang, H. et al.
2019 Compound Semiconductor Week, CSW 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. 8819315 (2019 Compound Semiconductor Week, CSW 2019 - Proceedings).

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Contribution à une conférence › Revue par des pairs

TY - GEN

T1 - Thermal dependence of the emission linewidth of 1.52-μm single mode InAs/InP quantum dot lasers

AU - Duan, J.

AU - Dong, B.

AU - Huang, H.

AU - Lu, Z. G.

AU - Poole, P. J.

AU - Grillot, F.

PY - 2019/5/1

Y1 - 2019/5/1

N2 - This paper experimentally investigates the thermal dependence of the emission linewidth of 1.52-μm single mode InAs/lnP quantum dot lasers. Using a distributed feedback cavity made with symmetric antireflection coatings, a minimum linewidth of 300 kHz is unveiled. This narrow line is found rather constant with the injection current and the temperature range (293 K - 313 K). However, under certain operating conditions, a linewidth rebroadening is also observed, which may be attributed to the spectral hole burning and to the variations of the alpha-factor with the temperature and bias current. Nevertheless, these results confirm the potential of this technology for manufacturing low-phase noise oscillators for coherent optical communications.

AB - This paper experimentally investigates the thermal dependence of the emission linewidth of 1.52-μm single mode InAs/lnP quantum dot lasers. Using a distributed feedback cavity made with symmetric antireflection coatings, a minimum linewidth of 300 kHz is unveiled. This narrow line is found rather constant with the injection current and the temperature range (293 K - 313 K). However, under certain operating conditions, a linewidth rebroadening is also observed, which may be attributed to the spectral hole burning and to the variations of the alpha-factor with the temperature and bias current. Nevertheless, these results confirm the potential of this technology for manufacturing low-phase noise oscillators for coherent optical communications.

KW - Distributed feedback lasers

KW - Quantum dots

KW - rebroadening

KW - spectral linewidth

U2 - 10.1109/ICIPRM.2019.8819315

DO - 10.1109/ICIPRM.2019.8819315

M3 - Conference contribution

AN - SCOPUS:85072956779

T3 - 2019 Compound Semiconductor Week, CSW 2019 - Proceedings

BT - 2019 Compound Semiconductor Week, CSW 2019 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2019 Compound Semiconductor Week, CSW 2019

Y2 - 19 May 2019 through 23 May 2019

ER -

Duan J, Dong B, Huang H, Lu ZG, Poole PJ, Grillot F. Thermal dependence of the emission linewidth of 1.52-μm single mode InAs/InP quantum dot lasers. Dans 2019 Compound Semiconductor Week, CSW 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2019. 8819315. (2019 Compound Semiconductor Week, CSW 2019 - Proceedings). doi: 10.1109/ICIPRM.2019.8819315

Thermal dependence of the emission linewidth of 1.52-μm single mode InAs/InP quantum dot lasers

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Série de publications

Une conférence

Accès au document

Empreinte digitale

Contient cette citation