Thermal emission and band-filling effects on the photoluminescence rise time of InGaAs/InAs/GaAs quantum dots

A. Melliti; M. A. Maaref; B. Sermage; J. Bloch; F. Saidi; F. Hassen; H. Maaref

doi:10.1016/j.physe.2005.01.011

Thermal emission and band-filling effects on the photoluminescence rise time of InGaAs/InAs/GaAs quantum dots

A. Melliti
, M. A. Maaref
, B. Sermage
, J. Bloch
, F. Saidi
, F. Hassen
, H. Maaref

École Polytechnique

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

In this paper, we present an experimental study of the thermal emission and band-filling effects on the rise time in high-quality InGaAs/InAs/GaAs quantum dots emitting at 1.2 μm at 10 K. At excitation density of 104 W cm ^-2, the photoluminescence rise time, which is dominated by the relaxation time, of the ground and first excited states are independent of temperature (40 ps). At excitation density of 5600 W cm^-2 the ground (first excited) state photoluminescence rise time varies from 90 ps (110 ps) at 10 K to 40 ps (70 ps) at 160 K. This behavior is attributed to the band-filling and the thermal emission effects on the efficiency of the relaxation.

langue originale	Anglais
Pages (de - à)	22-27
Nombre de pages	6
journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	28
Numéro de publication	1
Les DOIs	https://doi.org/10.1016/j.physe.2005.01.011
état	Publié - 1 juin 2005

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10.1016/j.physe.2005.01.011

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title = "Thermal emission and band-filling effects on the photoluminescence rise time of InGaAs/InAs/GaAs quantum dots",

abstract = "In this paper, we present an experimental study of the thermal emission and band-filling effects on the rise time in high-quality InGaAs/InAs/GaAs quantum dots emitting at 1.2 μm at 10 K. At excitation density of 104 W cm -2, the photoluminescence rise time, which is dominated by the relaxation time, of the ground and first excited states are independent of temperature (40 ps). At excitation density of 5600 W cm-2 the ground (first excited) state photoluminescence rise time varies from 90 ps (110 ps) at 10 K to 40 ps (70 ps) at 160 K. This behavior is attributed to the band-filling and the thermal emission effects on the efficiency of the relaxation.",

keywords = "Excitation density, Photoluminescence, Quantum dots, Relaxation, Rise time, Temperature",

author = "A. Melliti and Maaref, \{M. A.\} and B. Sermage and J. Bloch and F. Saidi and F. Hassen and H. Maaref",

year = "2005",

month = jun,

day = "1",

doi = "10.1016/j.physe.2005.01.011",

language = "English",

volume = "28",

pages = "22--27",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

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TY - JOUR

T1 - Thermal emission and band-filling effects on the photoluminescence rise time of InGaAs/InAs/GaAs quantum dots

AU - Melliti, A.

AU - Maaref, M. A.

AU - Sermage, B.

AU - Bloch, J.

AU - Saidi, F.

AU - Hassen, F.

AU - Maaref, H.

PY - 2005/6/1

Y1 - 2005/6/1

N2 - In this paper, we present an experimental study of the thermal emission and band-filling effects on the rise time in high-quality InGaAs/InAs/GaAs quantum dots emitting at 1.2 μm at 10 K. At excitation density of 104 W cm -2, the photoluminescence rise time, which is dominated by the relaxation time, of the ground and first excited states are independent of temperature (40 ps). At excitation density of 5600 W cm-2 the ground (first excited) state photoluminescence rise time varies from 90 ps (110 ps) at 10 K to 40 ps (70 ps) at 160 K. This behavior is attributed to the band-filling and the thermal emission effects on the efficiency of the relaxation.

AB - In this paper, we present an experimental study of the thermal emission and band-filling effects on the rise time in high-quality InGaAs/InAs/GaAs quantum dots emitting at 1.2 μm at 10 K. At excitation density of 104 W cm -2, the photoluminescence rise time, which is dominated by the relaxation time, of the ground and first excited states are independent of temperature (40 ps). At excitation density of 5600 W cm-2 the ground (first excited) state photoluminescence rise time varies from 90 ps (110 ps) at 10 K to 40 ps (70 ps) at 160 K. This behavior is attributed to the band-filling and the thermal emission effects on the efficiency of the relaxation.

KW - Excitation density

KW - Photoluminescence

KW - Quantum dots

KW - Relaxation

KW - Rise time

KW - Temperature

UR - https://www.scopus.com/pages/publications/18544366825

U2 - 10.1016/j.physe.2005.01.011

DO - 10.1016/j.physe.2005.01.011

M3 - Article

AN - SCOPUS:18544366825

SN - 1386-9477

VL - 28

SP - 22

EP - 27

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 1

ER -

Thermal emission and band-filling effects on the photoluminescence rise time of InGaAs/InAs/GaAs quantum dots

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