@inproceedings{3f01f62e10f84230a646f2260a9b8f05,
title = "Threshold current density and emitting wavelength evolution with stack number in inas quantum dash lasers at 1.55 μm",
abstract = "The authors demonstrate the achievement of InAs quantum dash lasers grown by molecular beam epitaxy (MBE) on InP (100) substrate. The lasers exhibit lasing wavelength at 1.55 μm by multiple stacked dash layers from two to five, with ground state lasing at room temperature. The threshold current density reaches a minimum value of 683 A/cm2 from double quantum dash structure, resulting from the trade-off between the low number of carrier requirement in the InAs active region and the reduction of carrier concentration in the opticalwaveguide.",
keywords = "Molecular beam epitaxy, Quantum dash laser, Threshold current density",
author = "Dayong Zhou and Rozenn Piron and Fr{\'e}d{\'e}ric Grillot and Olivier Dehaese and Estelle Homeyer and Thomas Batte and Karine Tavernier and Erwan Mac{\'e} and Jacky Even and Corre, \{Alain Le\} and Slimane Loualiche",
year = "2008",
month = dec,
day = "1",
doi = "10.1109/ICIPRM.2008.4703027",
language = "English",
isbn = "9781424422593",
series = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",
booktitle = "2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008",
note = "2008 International Conference on Indium Phosphide and Related Materials, IPRM 2008 ; Conference date: 25-05-2008 Through 29-05-2008",
}