Résumé
This article tries to theoretically compute the stimulated emission cross-sections when we know the oscillator strength of a broad material class (dielectric crystals hosting metal-transition impurity atoms). We apply the present approach to Ti:sapphire and check it by computing some emission cross-section curves for both π and σ polarizations. We also set a relationship between oscillator strength and radiative lifetime. Such an approach will allow future parametric studies for Ti:sapphire spectroscopic properties.
| langue originale | Anglais |
|---|---|
| Pages (de - à) | 33-37 |
| Nombre de pages | 5 |
| journal | Optical Materials |
| Volume | 65 |
| Les DOIs | |
| état | Publié - 1 mars 2017 |
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