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Towards Reliability MRAM for Energy-Efficient Spin-orbit Torque Switching

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Résumé

This work reviews the development of spin orbit torque (SOT) magnetic random access memory (MRAM) with respect to reliability over the past two decades. It presents an in-depth exploration of the foundational knowledge and physical modeling of SOT devices, detailing the impact of process, voltage, and temperature (PVT) variations alongside challenges in read and write reliability. Moreover, this review further investigates and synthesizes the recent advances in reliability enhancement strategies for SOT-MRAM at the device, manufacturing, circuit, and architectural levels. The overarching aim of this review is to foster further research into the reliability of SOT-MRAM within advanced process nodes, emphasizing its potential utility as a versatile general-purpose memory.

langue originaleAnglais
titreProceedings - 37th SBC/SBMicro/IEEE/ACM Symposium on Integrated Circuits and Systems Design, SBCCI 2024
EditeurInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronique)9798350391695
Les DOIs
étatPublié - 1 janv. 2024
Evénement37th SBC/SBMicro/IEEE/ACM Symposium on Integrated Circuits and Systems Design, SBCCI 2024 - Joao Pessoa, Brésil
Durée: 2 sept. 20246 sept. 2024

Série de publications

NomProceedings - 37th SBC/SBMicro/IEEE/ACM Symposium on Integrated Circuits and Systems Design, SBCCI 2024

Une conférence

Une conférence37th SBC/SBMicro/IEEE/ACM Symposium on Integrated Circuits and Systems Design, SBCCI 2024
Pays/TerritoireBrésil
La villeJoao Pessoa
période2/09/246/09/24

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