Résumé
The transient electroluminescence of monolayer and bilayer sexithiophene-based diodes has been measured. The delay time of the luminescence onset of the monolayer diode corresponds to a hole mobility of 5 × 10-6 cm2 V-1 s-1 which is considerably lower than that obtained by field-effect measurements. This is interpreted in terms of strong transient trapping. The bilayer diode presents a twofold time-resolved response which is attributed to the different mobility of its constituent layers.
| langue originale | Anglais |
|---|---|
| Pages (de - à) | 197-200 |
| Nombre de pages | 4 |
| journal | Synthetic Metals |
| Volume | 67 |
| Numéro de publication | 1-3 |
| Les DOIs | |
| état | Publié - 1 janv. 1994 |
Empreinte digitale
Examiner les sujets de recherche de « Transient electroluminescence of monolayer and bilayer sexithiophene diodes ». Ensemble, ils forment une empreinte digitale unique.Contient cette citation
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver