Transport mechanisms in hydrogenated microcrystalline silicon

R. Brenot; R. Vanderhaghen; B. Drévillon; P. Roca I Cabarrocas; R. Rogel; T. Mohammed-Brahim

doi:10.1016/S0040-6090(00)01791-0

Transport mechanisms in hydrogenated microcrystalline silicon

R. Brenot
, R. Vanderhaghen
, B. Drévillon
, P. Roca I Cabarrocas
, R. Rogel
, T. Mohammed-Brahim

Institut polytechnique de Paris
University of Rennes

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

Transport properties of microcrystalline (μc-Si/H) and polycrystalline (p-Si) silicon films are analyzed by time resolved microwave conductivity (TRMC), diffusion-induced TRMC (DTRMC), and Hall measurements. The comparison of carrier mobilities in microcrystalline silicon determined by TRMC as well as DTRMC shows that trapping in the disordered part of these films is not the main limiting parameter for transport in microcrystalline silicon. Besides, it is demonstrated that TRMC measurements are not sensitive to barriers between the crystallites. Our measurements reveal that, contrary to the case of p-Si, the influence of barriers in μc-Si/H can be neglected. Transport in μc-Si/H is consequently mainly limited by defects inside the crystallites.

langue originale	Anglais
Pages (de - à)	53-56
Nombre de pages	4
journal	Thin Solid Films
Volume	383
Numéro de publication	1-2
Les DOIs	https://doi.org/10.1016/S0040-6090(00)01791-0
état	Publié - 15 févr. 2001

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10.1016/S0040-6090(00)01791-0

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title = "Transport mechanisms in hydrogenated microcrystalline silicon",

abstract = "Transport properties of microcrystalline (μc-Si/H) and polycrystalline (p-Si) silicon films are analyzed by time resolved microwave conductivity (TRMC), diffusion-induced TRMC (DTRMC), and Hall measurements. The comparison of carrier mobilities in microcrystalline silicon determined by TRMC as well as DTRMC shows that trapping in the disordered part of these films is not the main limiting parameter for transport in microcrystalline silicon. Besides, it is demonstrated that TRMC measurements are not sensitive to barriers between the crystallites. Our measurements reveal that, contrary to the case of p-Si, the influence of barriers in μc-Si/H can be neglected. Transport in μc-Si/H is consequently mainly limited by defects inside the crystallites.",

author = "R. Brenot and R. Vanderhaghen and B. Dr{\'e}villon and \{Roca I Cabarrocas\}, P. and R. Rogel and T. Mohammed-Brahim",

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T1 - Transport mechanisms in hydrogenated microcrystalline silicon

AU - Brenot, R.

AU - Vanderhaghen, R.

AU - Drévillon, B.

AU - Roca I Cabarrocas, P.

AU - Rogel, R.

AU - Mohammed-Brahim, T.

PY - 2001/2/15

Y1 - 2001/2/15

N2 - Transport properties of microcrystalline (μc-Si/H) and polycrystalline (p-Si) silicon films are analyzed by time resolved microwave conductivity (TRMC), diffusion-induced TRMC (DTRMC), and Hall measurements. The comparison of carrier mobilities in microcrystalline silicon determined by TRMC as well as DTRMC shows that trapping in the disordered part of these films is not the main limiting parameter for transport in microcrystalline silicon. Besides, it is demonstrated that TRMC measurements are not sensitive to barriers between the crystallites. Our measurements reveal that, contrary to the case of p-Si, the influence of barriers in μc-Si/H can be neglected. Transport in μc-Si/H is consequently mainly limited by defects inside the crystallites.

AB - Transport properties of microcrystalline (μc-Si/H) and polycrystalline (p-Si) silicon films are analyzed by time resolved microwave conductivity (TRMC), diffusion-induced TRMC (DTRMC), and Hall measurements. The comparison of carrier mobilities in microcrystalline silicon determined by TRMC as well as DTRMC shows that trapping in the disordered part of these films is not the main limiting parameter for transport in microcrystalline silicon. Besides, it is demonstrated that TRMC measurements are not sensitive to barriers between the crystallites. Our measurements reveal that, contrary to the case of p-Si, the influence of barriers in μc-Si/H can be neglected. Transport in μc-Si/H is consequently mainly limited by defects inside the crystallites.

U2 - 10.1016/S0040-6090(00)01791-0

DO - 10.1016/S0040-6090(00)01791-0

M3 - Article

AN - SCOPUS:0035247925

SN - 0040-6090

VL - 383

SP - 53

EP - 56

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Transport mechanisms in hydrogenated microcrystalline silicon

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