Tritium induced defects in amorphous silicon

J. Whitaker; J. Viner; S. Zukotynski; E. Johnson; P. C. Taylor; P. Stradins

doi:10.1557/proc-808-a2.4

Tritium induced defects in amorphous silicon

J. Whitaker
, J. Viner
, S. Zukotynski
, E. Johnson
, P. C. Taylor
, P. Stradins

University of Utah
University of Toronto
National Renewable Energy Laboratory

Résultats de recherche: Contribution à un journal › Article de conférence › Revue par des pairs

Résumé

We report the growth of tritium induced defects in tritium doped hydrogenated amorphous silicon (a-Si:H,T) as measured by electron spin resonance (ESR) and photothermal deflection spectroscopy (PDS). The measurements allow one to examine the accumulation of defects in a-Si:H,T where the defect production mechanism is known. Defects produced by tritium decay are found to be much less numerous than the number of decayed tritium atoms and they are metastable like Staebler-Wronski defects. These results provide new insight into the metastable defect creation and the role of hydrogen motion.

langue originale	Anglais
Pages (de - à)	159-164
Nombre de pages	6
journal	Materials Research Society Symposium - Proceedings
Volume	808
Les DOIs	https://doi.org/10.1557/proc-808-a2.4
état	Publié - 1 janv. 2004
Modification externe	Oui
Evénement	Amorphous and Nanocrystalline Silicon Science and Technology - 2004 - San Francisco, CA, États-Unis Durée: 13 avr. 2004 → 16 avr. 2004

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10.1557/proc-808-a2.4

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title = "Tritium induced defects in amorphous silicon",

abstract = "We report the growth of tritium induced defects in tritium doped hydrogenated amorphous silicon (a-Si:H,T) as measured by electron spin resonance (ESR) and photothermal deflection spectroscopy (PDS). The measurements allow one to examine the accumulation of defects in a-Si:H,T where the defect production mechanism is known. Defects produced by tritium decay are found to be much less numerous than the number of decayed tritium atoms and they are metastable like Staebler-Wronski defects. These results provide new insight into the metastable defect creation and the role of hydrogen motion.",

author = "J. Whitaker and J. Viner and S. Zukotynski and E. Johnson and Taylor, \{P. C.\} and P. Stradins",

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T1 - Tritium induced defects in amorphous silicon

AU - Whitaker, J.

AU - Viner, J.

AU - Zukotynski, S.

AU - Johnson, E.

AU - Taylor, P. C.

AU - Stradins, P.

PY - 2004/1/1

Y1 - 2004/1/1

N2 - We report the growth of tritium induced defects in tritium doped hydrogenated amorphous silicon (a-Si:H,T) as measured by electron spin resonance (ESR) and photothermal deflection spectroscopy (PDS). The measurements allow one to examine the accumulation of defects in a-Si:H,T where the defect production mechanism is known. Defects produced by tritium decay are found to be much less numerous than the number of decayed tritium atoms and they are metastable like Staebler-Wronski defects. These results provide new insight into the metastable defect creation and the role of hydrogen motion.

AB - We report the growth of tritium induced defects in tritium doped hydrogenated amorphous silicon (a-Si:H,T) as measured by electron spin resonance (ESR) and photothermal deflection spectroscopy (PDS). The measurements allow one to examine the accumulation of defects in a-Si:H,T where the defect production mechanism is known. Defects produced by tritium decay are found to be much less numerous than the number of decayed tritium atoms and they are metastable like Staebler-Wronski defects. These results provide new insight into the metastable defect creation and the role of hydrogen motion.

UR - https://www.scopus.com/pages/publications/12844267619

U2 - 10.1557/proc-808-a2.4

DO - 10.1557/proc-808-a2.4

M3 - Conference article

AN - SCOPUS:12844267619

SN - 0272-9172

VL - 808

SP - 159

EP - 164

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Amorphous and Nanocrystalline Silicon Science and Technology - 2004

Y2 - 13 April 2004 through 16 April 2004

ER -

Tritium induced defects in amorphous silicon

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