Ultra wide voltage range consideration of reliability-aware STT magnetic flip-flop in 28 nm FDSOI technology

H. Cai; Y. Wang; L. A.B. Naviner; W. S. Zhao

doi:10.1016/j.microrel.2015.06.023

Ultra wide voltage range consideration of reliability-aware STT magnetic flip-flop in 28 nm FDSOI technology

H. Cai
, Y. Wang
, L. A.B. Naviner
, W. S. Zhao

Telecom Paris
Université Paris-Saclay
Beihang University

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

We investigate stochastic and deterministic reliability problems in the hybrid magnetic tunnel junction (MTJ)/MOS circuit which is implemented with ultra thin body and buried oxide (UTBB) fully depleted silicon-on-insulator (FDSOI) technology. A spin torque transfer (STT) magnetic flip-flop (MFF) is designed with ultra wide voltage range, with 0.5 V to 1.2 V sense/read voltage, and 0.95 V to 2 V writing voltage, by using an industrial 28 nm design kit and a physics-based STT-MTJ compact model. MFF performance can be improved with forward body bias (FBB) technology. The reliability-aware study shows that variability induced read/write failure is more dominant compared with aging induced degradation. Reliability-aware design of STT-MFF is discussed by proper selection of operation voltage.

langue originale	Anglais
Pages (de - à)	1323-1327
Nombre de pages	5
journal	Microelectronics Reliability
Volume	55
Numéro de publication	9-10
Les DOIs	https://doi.org/10.1016/j.microrel.2015.06.023
état	Publié - 1 août 2015

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10.1016/j.microrel.2015.06.023

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title = "Ultra wide voltage range consideration of reliability-aware STT magnetic flip-flop in 28 nm FDSOI technology",

abstract = "We investigate stochastic and deterministic reliability problems in the hybrid magnetic tunnel junction (MTJ)/MOS circuit which is implemented with ultra thin body and buried oxide (UTBB) fully depleted silicon-on-insulator (FDSOI) technology. A spin torque transfer (STT) magnetic flip-flop (MFF) is designed with ultra wide voltage range, with 0.5 V to 1.2 V sense/read voltage, and 0.95 V to 2 V writing voltage, by using an industrial 28 nm design kit and a physics-based STT-MTJ compact model. MFF performance can be improved with forward body bias (FBB) technology. The reliability-aware study shows that variability induced read/write failure is more dominant compared with aging induced degradation. Reliability-aware design of STT-MFF is discussed by proper selection of operation voltage.",

keywords = "FDSOI, Magnetic tunnel junction, Reliability, STT-MFF, Ultra wide voltage range",

author = "H. Cai and Y. Wang and Naviner, \{L. A.B.\} and Zhao, \{W. S.\}",

note = "Publisher Copyright: {\textcopyright} 2015 Elsevier Ltd.",

year = "2015",

month = aug,

day = "1",

doi = "10.1016/j.microrel.2015.06.023",

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AU - Cai, H.

AU - Wang, Y.

AU - Naviner, L. A.B.

AU - Zhao, W. S.

PY - 2015/8/1

Y1 - 2015/8/1

N2 - We investigate stochastic and deterministic reliability problems in the hybrid magnetic tunnel junction (MTJ)/MOS circuit which is implemented with ultra thin body and buried oxide (UTBB) fully depleted silicon-on-insulator (FDSOI) technology. A spin torque transfer (STT) magnetic flip-flop (MFF) is designed with ultra wide voltage range, with 0.5 V to 1.2 V sense/read voltage, and 0.95 V to 2 V writing voltage, by using an industrial 28 nm design kit and a physics-based STT-MTJ compact model. MFF performance can be improved with forward body bias (FBB) technology. The reliability-aware study shows that variability induced read/write failure is more dominant compared with aging induced degradation. Reliability-aware design of STT-MFF is discussed by proper selection of operation voltage.

AB - We investigate stochastic and deterministic reliability problems in the hybrid magnetic tunnel junction (MTJ)/MOS circuit which is implemented with ultra thin body and buried oxide (UTBB) fully depleted silicon-on-insulator (FDSOI) technology. A spin torque transfer (STT) magnetic flip-flop (MFF) is designed with ultra wide voltage range, with 0.5 V to 1.2 V sense/read voltage, and 0.95 V to 2 V writing voltage, by using an industrial 28 nm design kit and a physics-based STT-MTJ compact model. MFF performance can be improved with forward body bias (FBB) technology. The reliability-aware study shows that variability induced read/write failure is more dominant compared with aging induced degradation. Reliability-aware design of STT-MFF is discussed by proper selection of operation voltage.

KW - FDSOI

KW - Magnetic tunnel junction

KW - Reliability

KW - STT-MFF

KW - Ultra wide voltage range

UR - https://www.scopus.com/pages/publications/84943455452

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DO - 10.1016/j.microrel.2015.06.023

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IS - 9-10

ER -

Ultra wide voltage range consideration of reliability-aware STT magnetic flip-flop in 28 nm FDSOI technology

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