Ultrafast and nonlinear dynamics of InAs/GaAs semiconductor quantum dot lasers

Frédéric Grillot; D. Arsenijevic; H. Huang; D. Bimberg

doi:10.1117/12.2299678

Ultrafast and nonlinear dynamics of InAs/GaAs semiconductor quantum dot lasers

Frédéric Grillot
, D. Arsenijevic
, H. Huang
, D. Bimberg

Université Paris-Saclay
University of New Mexico
TU Berlin
King Abdulaziz University

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Contribution à une conférence › Revue par des pairs

Résumé

Quantum dot nanostructures are one of the best practical examples of emerging nanotechnologies hence offering superior properties as compared to their quantum well counterparts. InAs/GaAs quantum dots allow producing energy- and cost-efficient devices with outstanding temperature stability, lowest threshold current, ultrafast gain dynamics, and low amplified spontaneous emission. This paper reports on the recent achievements in ultrafast and nonlinear dynamics properties of InAs/GaAs quantum dot lasers for radar systems, wireless communications and high-speed optical communications. Passive mode-locking is shown to exhibit a great potential for microwave, millimeter-wave and Terahertz signal generation with high repetition frequency tuning and jitter reduction. The optical feedback is also used to stabilize the pulse emission leading an integrated timing jitter as low as 90 fs without consuming additional power. Lastly, multimode optical feedback dynamics of InAs/GaAs QD lasers emitting on different lasing states is also studied. In particular, a chaos free operation is observed for the first time from the ground state lasing operation.

langue originale	Anglais
titre	Quantum Dots and Nanostructures
Sous-titre	Growth, Characterization, and Modeling XV
rédacteurs en chef	Diana L. Huffaker, Holger Eisele
Editeur	SPIE
ISBN (Electronique)	9781510615717
Les DOIs	https://doi.org/10.1117/12.2299678
état	Publié - 1 janv. 2018
Modification externe	Oui
Evénement	Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XV 2018 - San Francisco, États-Unis Durée: 29 janv. 2018 → 31 janv. 2018

Série de publications

Nom	Proceedings of SPIE - The International Society for Optical Engineering
Volume	10543
ISSN (imprimé)	0277-786X
ISSN (Electronique)	1996-756X

Une conférence

Une conférence	Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XV 2018
Pays/Territoire	États-Unis
La ville	San Francisco
période	29/01/18 → 31/01/18

Accès au document

10.1117/12.2299678

Contient cette citation

Grillot, F., Arsenijevic, D., Huang, H., & Bimberg, D. (2018). Ultrafast and nonlinear dynamics of InAs/GaAs semiconductor quantum dot lasers. Dans D. L. Huffaker, & H. Eisele (eds.), Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XV Article 105430M (Proceedings of SPIE - The International Society for Optical Engineering; Vol 10543). SPIE. https://doi.org/10.1117/12.2299678

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abstract = "Quantum dot nanostructures are one of the best practical examples of emerging nanotechnologies hence offering superior properties as compared to their quantum well counterparts. InAs/GaAs quantum dots allow producing energy- and cost-efficient devices with outstanding temperature stability, lowest threshold current, ultrafast gain dynamics, and low amplified spontaneous emission. This paper reports on the recent achievements in ultrafast and nonlinear dynamics properties of InAs/GaAs quantum dot lasers for radar systems, wireless communications and high-speed optical communications. Passive mode-locking is shown to exhibit a great potential for microwave, millimeter-wave and Terahertz signal generation with high repetition frequency tuning and jitter reduction. The optical feedback is also used to stabilize the pulse emission leading an integrated timing jitter as low as 90 fs without consuming additional power. Lastly, multimode optical feedback dynamics of InAs/GaAs QD lasers emitting on different lasing states is also studied. In particular, a chaos free operation is observed for the first time from the ground state lasing operation.",

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Grillot, F, Arsenijevic, D, Huang, H & Bimberg, D 2018, Ultrafast and nonlinear dynamics of InAs/GaAs semiconductor quantum dot lasers. Dans DL Huffaker & H Eisele (eds), Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XV., 105430M, Proceedings of SPIE - The International Society for Optical Engineering, VOL. 10543, SPIE, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XV 2018, San Francisco, États-Unis, 29/01/18. https://doi.org/10.1117/12.2299678

Ultrafast and nonlinear dynamics of InAs/GaAs semiconductor quantum dot lasers. / Grillot, Frédéric; Arsenijevic, D.; Huang, H. et al.
Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XV. Ed. / Diana L. Huffaker; Holger Eisele. SPIE, 2018. 105430M (Proceedings of SPIE - The International Society for Optical Engineering; Vol 10543).

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Contribution à une conférence › Revue par des pairs

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AU - Grillot, Frédéric

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N1 - Publisher Copyright: © COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only.

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AB - Quantum dot nanostructures are one of the best practical examples of emerging nanotechnologies hence offering superior properties as compared to their quantum well counterparts. InAs/GaAs quantum dots allow producing energy- and cost-efficient devices with outstanding temperature stability, lowest threshold current, ultrafast gain dynamics, and low amplified spontaneous emission. This paper reports on the recent achievements in ultrafast and nonlinear dynamics properties of InAs/GaAs quantum dot lasers for radar systems, wireless communications and high-speed optical communications. Passive mode-locking is shown to exhibit a great potential for microwave, millimeter-wave and Terahertz signal generation with high repetition frequency tuning and jitter reduction. The optical feedback is also used to stabilize the pulse emission leading an integrated timing jitter as low as 90 fs without consuming additional power. Lastly, multimode optical feedback dynamics of InAs/GaAs QD lasers emitting on different lasing states is also studied. In particular, a chaos free operation is observed for the first time from the ground state lasing operation.

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Grillot F, Arsenijevic D, Huang H, Bimberg D. Ultrafast and nonlinear dynamics of InAs/GaAs semiconductor quantum dot lasers. Dans Huffaker DL, Eisele H, rédacteurs en chef, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XV. SPIE. 2018. 105430M. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.2299678

Ultrafast and nonlinear dynamics of InAs/GaAs semiconductor quantum dot lasers

Résumé

Série de publications

Une conférence

Accès au document

Empreinte digitale

Contient cette citation