Ultrafast electron redistribution in intrinsic GaAs

F. X. Camescasse; A. Alexandrou; D. Hulin; L. Banyai; D. B. Tran Thoai; H. Haug

Ultrafast electron redistribution in intrinsic GaAs

F. X. Camescasse
, A. Alexandrou
, D. Hulin
, L. Banyai
, D. B. Tran Thoai
, H. Haug

Résultats de recherche: Contribution à une conférence › Papier › Revue par des pairs

Résumé

A nondegenerate pump probe scheme to isolate the electron dynamics is investigated. The pump pulse excites electron from the heavy-hole and the light-hole valence bands while the probe pulse tests the absorption saturation of the interband transition from the split-off (SO) valence band to the conduction band. Because of the large spin-orbit splitting in GaAs no holes are present in the SO band and the differential absorption signal depends on the electron distribution only. Furthermore, this method allows the observation of spectral hole burning as a result of the initially injected electron population without any contribution from the induced-grating coherence effect.

langue originale	Anglais
Pages	77
Nombre de pages	1
état	Publié - 1 janv. 1997
Evénement	Proceedings of the 1997 Conference on Quantum Electronics and Laser Science, QELS - Baltimore, MD, USA Durée: 18 mai 1997 → 23 mai 1997

Une conférence

Une conférence	Proceedings of the 1997 Conference on Quantum Electronics and Laser Science, QELS
La ville	Baltimore, MD, USA
période	18/05/97 → 23/05/97

Contient cette citation

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title = "Ultrafast electron redistribution in intrinsic GaAs",

abstract = "A nondegenerate pump probe scheme to isolate the electron dynamics is investigated. The pump pulse excites electron from the heavy-hole and the light-hole valence bands while the probe pulse tests the absorption saturation of the interband transition from the split-off (SO) valence band to the conduction band. Because of the large spin-orbit splitting in GaAs no holes are present in the SO band and the differential absorption signal depends on the electron distribution only. Furthermore, this method allows the observation of spectral hole burning as a result of the initially injected electron population without any contribution from the induced-grating coherence effect.",

author = "Camescasse, \{F. X.\} and A. Alexandrou and D. Hulin and L. Banyai and \{Tran Thoai\}, \{D. B.\} and H. Haug",

year = "1997",

month = jan,

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language = "English",

pages = "77",

note = "Proceedings of the 1997 Conference on Quantum Electronics and Laser Science, QELS ; Conference date: 18-05-1997 Through 23-05-1997",

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TY - CONF

T1 - Ultrafast electron redistribution in intrinsic GaAs

AU - Camescasse, F. X.

AU - Alexandrou, A.

AU - Hulin, D.

AU - Banyai, L.

AU - Tran Thoai, D. B.

AU - Haug, H.

PY - 1997/1/1

Y1 - 1997/1/1

N2 - A nondegenerate pump probe scheme to isolate the electron dynamics is investigated. The pump pulse excites electron from the heavy-hole and the light-hole valence bands while the probe pulse tests the absorption saturation of the interband transition from the split-off (SO) valence band to the conduction band. Because of the large spin-orbit splitting in GaAs no holes are present in the SO band and the differential absorption signal depends on the electron distribution only. Furthermore, this method allows the observation of spectral hole burning as a result of the initially injected electron population without any contribution from the induced-grating coherence effect.

AB - A nondegenerate pump probe scheme to isolate the electron dynamics is investigated. The pump pulse excites electron from the heavy-hole and the light-hole valence bands while the probe pulse tests the absorption saturation of the interband transition from the split-off (SO) valence band to the conduction band. Because of the large spin-orbit splitting in GaAs no holes are present in the SO band and the differential absorption signal depends on the electron distribution only. Furthermore, this method allows the observation of spectral hole burning as a result of the initially injected electron population without any contribution from the induced-grating coherence effect.

M3 - Paper

AN - SCOPUS:0030647470

SP - 77

T2 - Proceedings of the 1997 Conference on Quantum Electronics and Laser Science, QELS

Y2 - 18 May 1997 through 23 May 1997

ER -

Ultrafast electron redistribution in intrinsic GaAs

Résumé

Une conférence

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