Ultrafast electron redistribution in intrinsic GaAs

F. X. Camescasse; A. Alexandrou; D. Hulin; L. Banyai; D. B.Tran Thoai; H. Haug

Ultrafast electron redistribution in intrinsic GaAs

F. X. Camescasse
, A. Alexandrou
, D. Hulin
, L. Banyai
, D. B.Tran Thoai
, H. Haug

Résultats de recherche: Contribution à un journal › Article de conférence › Revue par des pairs

Résumé

A nondegenerate pump-probe scheme was used to isolate the electron dynamics: the pump pulse excites electrons from the heavy-hole (HH) and light-hole (LH) valence bands while the probe pulse tests the absorption saturation of the interband from the split-off (SO) valence band to the conduction band C. A Ti:sapphire modelocked oscillator and regenerative amplifier system and spectral continuum generation for the pulse probe was used. The sample was an intrinsic GaAs layer, antireflection coated on both sides and held at 15 K. The differential absorption spectra showed to broad peaks at about 1913 and 1950 meV resulting from spectral hole burning.

langue originale	Anglais
Pages (de - à)	220-221
Nombre de pages	2
journal	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume	11
état	Publié - 1 janv. 1997
Evénement	Proceedings of the 1997 Conference on Lasers and Electro-Optics, CLEO - Baltimore, MD, USA Durée: 18 mai 1997 → 23 mai 1997

Contient cette citation

@article{720f253676fa4d91ad6ecb15867c9471,

title = "Ultrafast electron redistribution in intrinsic GaAs",

abstract = "A nondegenerate pump-probe scheme was used to isolate the electron dynamics: the pump pulse excites electrons from the heavy-hole (HH) and light-hole (LH) valence bands while the probe pulse tests the absorption saturation of the interband from the split-off (SO) valence band to the conduction band C. A Ti:sapphire modelocked oscillator and regenerative amplifier system and spectral continuum generation for the pulse probe was used. The sample was an intrinsic GaAs layer, antireflection coated on both sides and held at 15 K. The differential absorption spectra showed to broad peaks at about 1913 and 1950 meV resulting from spectral hole burning.",

author = "Camescasse, \{F. X.\} and A. Alexandrou and D. Hulin and L. Banyai and Thoai, \{D. B.Tran\} and H. Haug",

year = "1997",

month = jan,

day = "1",

language = "English",

volume = "11",

pages = "220--221",

journal = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

issn = "1092-8081",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1997 Conference on Lasers and Electro-Optics, CLEO ; Conference date: 18-05-1997 Through 23-05-1997",

}

TY - JOUR

T1 - Ultrafast electron redistribution in intrinsic GaAs

AU - Camescasse, F. X.

AU - Alexandrou, A.

AU - Hulin, D.

AU - Banyai, L.

AU - Thoai, D. B.Tran

AU - Haug, H.

PY - 1997/1/1

Y1 - 1997/1/1

N2 - A nondegenerate pump-probe scheme was used to isolate the electron dynamics: the pump pulse excites electrons from the heavy-hole (HH) and light-hole (LH) valence bands while the probe pulse tests the absorption saturation of the interband from the split-off (SO) valence band to the conduction band C. A Ti:sapphire modelocked oscillator and regenerative amplifier system and spectral continuum generation for the pulse probe was used. The sample was an intrinsic GaAs layer, antireflection coated on both sides and held at 15 K. The differential absorption spectra showed to broad peaks at about 1913 and 1950 meV resulting from spectral hole burning.

AB - A nondegenerate pump-probe scheme was used to isolate the electron dynamics: the pump pulse excites electrons from the heavy-hole (HH) and light-hole (LH) valence bands while the probe pulse tests the absorption saturation of the interband from the split-off (SO) valence band to the conduction band C. A Ti:sapphire modelocked oscillator and regenerative amplifier system and spectral continuum generation for the pulse probe was used. The sample was an intrinsic GaAs layer, antireflection coated on both sides and held at 15 K. The differential absorption spectra showed to broad peaks at about 1913 and 1950 meV resulting from spectral hole burning.

M3 - Conference article

AN - SCOPUS:0030675873

SN - 1092-8081

VL - 11

SP - 220

EP - 221

JO - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

JF - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

T2 - Proceedings of the 1997 Conference on Lasers and Electro-Optics, CLEO

Y2 - 18 May 1997 through 23 May 1997

ER -

Ultrafast electron redistribution in intrinsic GaAs

Résumé

Empreinte digitale

Contient cette citation