Ultrafast gain in semiconductors

J. P. Likforman; M. Joffre; D. Hulin

doi:10.1007/978-3-642-80314-7_176

Ultrafast gain in semiconductors

J. P. Likforman
, M. Joffre
, D. Hulin

Laboratory d'Optique Appliquée, ENSTA, CNRS-École Polytechnique

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

We performed femtosecond pump-probe experiments in a high-intensity regime revealing an excitonic gain in a coherently-driven semiconductor.

langue originale	Anglais
Pages (de - à)	404-405
Nombre de pages	2
journal	Springer Series in Chemical Physics
Volume	62
Les DOIs	https://doi.org/10.1007/978-3-642-80314-7_176
état	Publié - 1 janv. 1996

Accès au document

10.1007/978-3-642-80314-7_176

Autres fichiers et liens

Lien vers la publication dans Scopus

Contient cette citation

@article{28e2cfe1fc4b4452bbfffae1fa37b62b,

title = "Ultrafast gain in semiconductors",

abstract = "We performed femtosecond pump-probe experiments in a high-intensity regime revealing an excitonic gain in a coherently-driven semiconductor.",

author = "Likforman, \{J. P.\} and M. Joffre and D. Hulin",

year = "1996",

month = jan,

day = "1",

doi = "10.1007/978-3-642-80314-7\_176",

language = "English",

volume = "62",

pages = "404--405",

journal = "Springer Series in Chemical Physics",

issn = "0172-6218",

}

TY - JOUR

T1 - Ultrafast gain in semiconductors

AU - Likforman, J. P.

AU - Joffre, M.

AU - Hulin, D.

PY - 1996/1/1

Y1 - 1996/1/1

N2 - We performed femtosecond pump-probe experiments in a high-intensity regime revealing an excitonic gain in a coherently-driven semiconductor.

AB - We performed femtosecond pump-probe experiments in a high-intensity regime revealing an excitonic gain in a coherently-driven semiconductor.

UR - https://www.scopus.com/pages/publications/2842552503

U2 - 10.1007/978-3-642-80314-7_176

DO - 10.1007/978-3-642-80314-7_176

M3 - Article

AN - SCOPUS:2842552503

SN - 0172-6218

VL - 62

SP - 404

EP - 405

JO - Springer Series in Chemical Physics

JF - Springer Series in Chemical Physics

ER -

Ultrafast gain in semiconductors

Résumé

Accès au document

Autres fichiers et liens

Empreinte digitale

Contient cette citation