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Ultralow noise and high-power VECSEL for high dynamic range and broadband RF/optical links

  • Ghaya Baili
  • , Loïc Morvan
  • , Grégoire Pillet
  • , Sophie Bouchoule
  • , Zhuang Zhao
  • , Jean Louis Oudar
  • , Loïc Ménager
  • , Stéphane Formont
  • , Frédéric Van Dijk
  • , Mickaël Faugeron
  • , Mehdi Alouini
  • , Fabien Bretenaker
  • , Daniel Dolfi
  • Thales Research & Technology
  • Centre de Nanosciences et de Nanotechnologies
  • Thales Group
  • Alcatel-Thales III-V Laboratory
  • IPR (Institut de Physique de Rennes) - UMR 6251
  • Laboratoire Aimé Cotton

Résultats de recherche: Contribution à un journalArticleRevue par des pairs

Résumé

We describe a compact, ultralow noise, and high-power semiconductor laser implemented in a high performances wideband externally modulated optical link. The laser is based on a vertical external cavity surface emitting laser (VECSEL) designed for high-power and low-noise operation. Thanks to a specific design of the gain chip, the half-VCSEL, based on a metamorphic Bragg mirror and a report on a copper substrate, an optical power of 110 mW is obtained at 1.55 μm in the single frequency regime. For low-noise operation, the laser cavity is designed for free-relaxation-oscillations operation, i.e., in the so-called class-A regime. The Class-A VECSEL exhibits a relative intensity noise below -170 dB/Hz over a wide frequency bandwidth, from 300 MHz to 40 GHz, except at the laser free spectral range (20.4 GHz). In the low-frequency range, the laser noise, mainly due to transfer of pump noise to laser noise, goes from -110 dB/Hz at 1 kHz down to -158 dB/Hz at 10 MHz. Two externally modulated optical links are implemented and compared in terms of the RF gain and the noise figure. The first optical link is based on the ultralow noise class-A VECSEL and the second one is based on a low noise class-B DFB laser. Thanks to the outstanding noise properties of the designed VECSEL, the VECSEL-based optical link outperforms the DFB-based one, in particular for frequencies larger than 20 GHz.

langue originaleAnglais
Numéro d'article6825795
Pages (de - à)3489-3494
Nombre de pages6
journalJournal of Lightwave Technology
Volume32
Numéro de publication20
Les DOIs
étatPublié - 15 oct. 2014
Modification externeOui

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