Ultrathin epitaxial rare-earth silicide interfaces on Si(111)7 × 7

O. Sakho; F. Sirotti; M. DeSantis; M. Sacchi; G. Rossi

doi:10.1016/0169-4332(92)90290-E

Ultrathin epitaxial rare-earth silicide interfaces on Si(111)7 × 7

O. Sakho
, F. Sirotti
, M. DeSantis
, M. Sacchi
, G. Rossi

Université Paris-Saclay
ETH Zurich

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

Monolayers of Dy and Ho deposited on Si(111)7 × 7 surfaces and annealed at T > 600°C convert into epitaxial pseudo-disilicide interfaces which are terminated by extra silicon at the surface. Extended and core electron states are probed by synchrotron radiation photoemission and provide a chemical characterisation of there two-dimensional interfaces which have been recently found to display a very strong dichroism in X-ray absorption studies.

langue originale	Anglais
Pages (de - à)	568-571
Nombre de pages	4
journal	Applied Surface Science
Volume	56-58
Numéro de publication	PART 1
Les DOIs	https://doi.org/10.1016/0169-4332(92)90290-E
état	Publié - 1 janv. 1992

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10.1016/0169-4332(92)90290-E

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title = "Ultrathin epitaxial rare-earth silicide interfaces on Si(111)7 × 7",

abstract = "Monolayers of Dy and Ho deposited on Si(111)7 × 7 surfaces and annealed at T > 600°C convert into epitaxial pseudo-disilicide interfaces which are terminated by extra silicon at the surface. Extended and core electron states are probed by synchrotron radiation photoemission and provide a chemical characterisation of there two-dimensional interfaces which have been recently found to display a very strong dichroism in X-ray absorption studies.",

author = "O. Sakho and F. Sirotti and M. DeSantis and M. Sacchi and G. Rossi",

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T1 - Ultrathin epitaxial rare-earth silicide interfaces on Si(111)7 × 7

AU - Sakho, O.

AU - Sirotti, F.

AU - DeSantis, M.

AU - Sacchi, M.

AU - Rossi, G.

PY - 1992/1/1

Y1 - 1992/1/1

N2 - Monolayers of Dy and Ho deposited on Si(111)7 × 7 surfaces and annealed at T > 600°C convert into epitaxial pseudo-disilicide interfaces which are terminated by extra silicon at the surface. Extended and core electron states are probed by synchrotron radiation photoemission and provide a chemical characterisation of there two-dimensional interfaces which have been recently found to display a very strong dichroism in X-ray absorption studies.

AB - Monolayers of Dy and Ho deposited on Si(111)7 × 7 surfaces and annealed at T > 600°C convert into epitaxial pseudo-disilicide interfaces which are terminated by extra silicon at the surface. Extended and core electron states are probed by synchrotron radiation photoemission and provide a chemical characterisation of there two-dimensional interfaces which have been recently found to display a very strong dichroism in X-ray absorption studies.

UR - https://www.scopus.com/pages/publications/0012155010

U2 - 10.1016/0169-4332(92)90290-E

DO - 10.1016/0169-4332(92)90290-E

M3 - Article

AN - SCOPUS:0012155010

SN - 0169-4332

VL - 56-58

SP - 568

EP - 571

JO - Applied Surface Science

JF - Applied Surface Science

IS - PART 1

ER -

Ultrathin epitaxial rare-earth silicide interfaces on Si(111)7 × 7

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