Ultrathin junctions based on the LaSrMnO3/Nb:SrTiO3 functional oxide interface

G. Kurij; L. E. Calvet; R. Guerrero; T. Maroutian; G. Agnus; A. Solignac; Ph Lecoeur

doi:10.1016/j.tsf.2016.03.062

Ultrathin junctions based on the LaSrMnO₃/Nb:SrTiO₃ functional oxide interface

G. Kurij
, L. E. Calvet
, R. Guerrero
, T. Maroutian
, G. Agnus
, A. Solignac
, Ph Lecoeur

Université Paris-Saclay
Institut Pierre Simon Laplace, CNRS and CEA

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

Résumé

High-quality all-oxide thin film metal–semiconductor junctions, fabricated of a half-metallic ferromagnet La_0.7Sr_0.3MnO₃ and of a niobium doped n-type semiconductor SrTiO₃ (SrTi_0.8Nb_0.2O₃) by pulsed laser deposition, were studied in terms of their electronic transport properties in a wide temperature range. A fabrication process for ultrathin film metal–semiconductor junctions with micrometre-sized mesas has been established. The current–voltage characteristics of the junctions were found at variance with the conventional thermionic emission theory often applied to explain the transport properties of Schottky contacts. This discrepancy is tentatively ascribed to the very high electric field in the ultrathin SrTi_0.8Nb_0.2O₃ layer and its effect on carrier depletion and dielectric constant.

langue originale	Anglais
Pages (de - à)	82-85
Nombre de pages	4
journal	Thin Solid Films
Volume	617
Les DOIs	https://doi.org/10.1016/j.tsf.2016.03.062
état	Publié - 30 oct. 2016
Modification externe	Oui

Accès au document

10.1016/j.tsf.2016.03.062

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@article{a7c4a9b8b55e415c8666dccbfc6fa3c3,

title = "Ultrathin junctions based on the LaSrMnO3/Nb:SrTiO3 functional oxide interface",

abstract = "High-quality all-oxide thin film metal–semiconductor junctions, fabricated of a half-metallic ferromagnet La0.7Sr0.3MnO3 and of a niobium doped n-type semiconductor SrTiO3 (SrTi0.8Nb0.2O3) by pulsed laser deposition, were studied in terms of their electronic transport properties in a wide temperature range. A fabrication process for ultrathin film metal–semiconductor junctions with micrometre-sized mesas has been established. The current–voltage characteristics of the junctions were found at variance with the conventional thermionic emission theory often applied to explain the transport properties of Schottky contacts. This discrepancy is tentatively ascribed to the very high electric field in the ultrathin SrTi0.8Nb0.2O3 layer and its effect on carrier depletion and dielectric constant.",

keywords = "Functional oxide interface, Lanthanum strontium manganite, Metal–semiconductor contact, Niobium-doped strontium titanate, Schottky junction",

author = "G. Kurij and Calvet, \{L. E.\} and R. Guerrero and T. Maroutian and G. Agnus and A. Solignac and Ph Lecoeur",

note = "Publisher Copyright: {\textcopyright} 2016 Elsevier B.V.",

year = "2016",

month = oct,

day = "30",

doi = "10.1016/j.tsf.2016.03.062",

language = "English",

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TY - JOUR

T1 - Ultrathin junctions based on the LaSrMnO3/Nb:SrTiO3 functional oxide interface

AU - Kurij, G.

AU - Calvet, L. E.

AU - Guerrero, R.

AU - Maroutian, T.

AU - Agnus, G.

AU - Solignac, A.

AU - Lecoeur, Ph

PY - 2016/10/30

Y1 - 2016/10/30

N2 - High-quality all-oxide thin film metal–semiconductor junctions, fabricated of a half-metallic ferromagnet La0.7Sr0.3MnO3 and of a niobium doped n-type semiconductor SrTiO3 (SrTi0.8Nb0.2O3) by pulsed laser deposition, were studied in terms of their electronic transport properties in a wide temperature range. A fabrication process for ultrathin film metal–semiconductor junctions with micrometre-sized mesas has been established. The current–voltage characteristics of the junctions were found at variance with the conventional thermionic emission theory often applied to explain the transport properties of Schottky contacts. This discrepancy is tentatively ascribed to the very high electric field in the ultrathin SrTi0.8Nb0.2O3 layer and its effect on carrier depletion and dielectric constant.

AB - High-quality all-oxide thin film metal–semiconductor junctions, fabricated of a half-metallic ferromagnet La0.7Sr0.3MnO3 and of a niobium doped n-type semiconductor SrTiO3 (SrTi0.8Nb0.2O3) by pulsed laser deposition, were studied in terms of their electronic transport properties in a wide temperature range. A fabrication process for ultrathin film metal–semiconductor junctions with micrometre-sized mesas has been established. The current–voltage characteristics of the junctions were found at variance with the conventional thermionic emission theory often applied to explain the transport properties of Schottky contacts. This discrepancy is tentatively ascribed to the very high electric field in the ultrathin SrTi0.8Nb0.2O3 layer and its effect on carrier depletion and dielectric constant.

KW - Functional oxide interface

KW - Lanthanum strontium manganite

KW - Metal–semiconductor contact

KW - Niobium-doped strontium titanate

KW - Schottky junction

UR - https://www.scopus.com/pages/publications/84964331076

U2 - 10.1016/j.tsf.2016.03.062

DO - 10.1016/j.tsf.2016.03.062

M3 - Article

AN - SCOPUS:84964331076

SN - 0040-6090

VL - 617

SP - 82

EP - 85

JO - Thin Solid Films

JF - Thin Solid Films