Ultrathin nanostructured c-Si solar cells by low temperature and scalable processes

A. Gaucher; A. Cattoni; I. Massiot; C. Dupuis; W. Chen; R. Cariou; M. Foldyna; P. Roca Cabarrocas; L. Lalouat; E. Drouard; C. Seassal; S. Collin

doi:10.1109/PVSC.2015.7356215

Ultrathin nanostructured c-Si solar cells by low temperature and scalable processes

A. Gaucher
, A. Cattoni
, I. Massiot
, C. Dupuis
, W. Chen
, R. Cariou
, M. Foldyna
, P. Roca Cabarrocas
, L. Lalouat
, E. Drouard
, C. Seassal
, S. Collin

Centre de Nanosciences et de Nanotechnologies
Institut polytechnique de Paris
Université de Lyon

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Contribution à une conférence › Revue par des pairs

1 Citation (Scopus)

Résumé

We report on the fabrication and characterization of both flat and patterned c-Si solar cells on glass. We use epitaxial layers grown by plasma enhanced chemical vapor deposition at low temperature (T<200°C), and anodic bonding on glass substrate. Inverted nanopyramids are fabricated by nanoimprint lithography and wet etching in alkaline solution. With 3μm-thick c-Si layers, the performances achieved with planar solar cells are Jsc = 18.3mA/cm2 and η = 6.1%. With an additional nanopyramid array on the front side of the cell, an improved short-circuit current of 25.3mA/cm2 is obtained. We present the latest experimental results and discuss the path to be followed to achieve low cost, ultrathin c-Si solar cells with a 15% targeted efficiency.

langue originale	Anglais
titre	2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
Editeur	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronique)	9781479979448
Les DOIs	https://doi.org/10.1109/PVSC.2015.7356215
état	Publié - 14 déc. 2015
Evénement	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, États-Unis Durée: 14 juin 2015 → 19 juin 2015

Série de publications

Nom	2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

Une conférence

Une conférence	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
Pays/Territoire	États-Unis
La ville	New Orleans
période	14/06/15 → 19/06/15

SDG des Nations Unies

Ce résultat contribue à ou aux Objectifs de développement durable suivants

SDG 7 Énergie abordable et propre

Accès au document

10.1109/PVSC.2015.7356215

Contient cette citation

Gaucher, A., Cattoni, A., Massiot, I., Dupuis, C., Chen, W., Cariou, R., Foldyna, M., Roca Cabarrocas, P., Lalouat, L., Drouard, E., Seassal, C., & Collin, S. (2015). Ultrathin nanostructured c-Si solar cells by low temperature and scalable processes. Dans 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 Article 7356215 (2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2015.7356215

@inproceedings{11f1b0ce69884cf99de5bbc479475e8e,

title = "Ultrathin nanostructured c-Si solar cells by low temperature and scalable processes",

abstract = "We report on the fabrication and characterization of both flat and patterned c-Si solar cells on glass. We use epitaxial layers grown by plasma enhanced chemical vapor deposition at low temperature (T<200°C), and anodic bonding on glass substrate. Inverted nanopyramids are fabricated by nanoimprint lithography and wet etching in alkaline solution. With 3μm-thick c-Si layers, the performances achieved with planar solar cells are Jsc = 18.3mA/cm2 and η = 6.1\%. With an additional nanopyramid array on the front side of the cell, an improved short-circuit current of 25.3mA/cm2 is obtained. We present the latest experimental results and discuss the path to be followed to achieve low cost, ultrathin c-Si solar cells with a 15\% targeted efficiency.",

keywords = "Crystalline silicon, epitaxial transfer, light trapping, nanoimprint lithography, photovoltaic cells, thin films",

author = "A. Gaucher and A. Cattoni and I. Massiot and C. Dupuis and W. Chen and R. Cariou and M. Foldyna and \{Roca Cabarrocas\}, P. and L. Lalouat and E. Drouard and C. Seassal and S. Collin",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 ; Conference date: 14-06-2015 Through 19-06-2015",

year = "2015",

month = dec,

day = "14",

doi = "10.1109/PVSC.2015.7356215",

language = "English",

series = "2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Gaucher, A, Cattoni, A, Massiot, I, Dupuis, C, Chen, W, Cariou, R, Foldyna, M , Roca Cabarrocas, P, Lalouat, L, Drouard, E, Seassal, C & Collin, S 2015, Ultrathin nanostructured c-Si solar cells by low temperature and scalable processes. Dans 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015., 7356215, 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015, Institute of Electrical and Electronics Engineers Inc., 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015, New Orleans, États-Unis, 14/06/15. https://doi.org/10.1109/PVSC.2015.7356215

Ultrathin nanostructured c-Si solar cells by low temperature and scalable processes. / Gaucher, A.; Cattoni, A.; Massiot, I. et al.
2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7356215 (2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015).

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Contribution à une conférence › Revue par des pairs

TY - GEN

T1 - Ultrathin nanostructured c-Si solar cells by low temperature and scalable processes

AU - Gaucher, A.

AU - Cattoni, A.

AU - Massiot, I.

AU - Dupuis, C.

AU - Chen, W.

AU - Cariou, R.

AU - Foldyna, M.

AU - Roca Cabarrocas, P.

AU - Lalouat, L.

AU - Drouard, E.

AU - Seassal, C.

AU - Collin, S.

PY - 2015/12/14

Y1 - 2015/12/14

N2 - We report on the fabrication and characterization of both flat and patterned c-Si solar cells on glass. We use epitaxial layers grown by plasma enhanced chemical vapor deposition at low temperature (T<200°C), and anodic bonding on glass substrate. Inverted nanopyramids are fabricated by nanoimprint lithography and wet etching in alkaline solution. With 3μm-thick c-Si layers, the performances achieved with planar solar cells are Jsc = 18.3mA/cm2 and η = 6.1%. With an additional nanopyramid array on the front side of the cell, an improved short-circuit current of 25.3mA/cm2 is obtained. We present the latest experimental results and discuss the path to be followed to achieve low cost, ultrathin c-Si solar cells with a 15% targeted efficiency.

AB - We report on the fabrication and characterization of both flat and patterned c-Si solar cells on glass. We use epitaxial layers grown by plasma enhanced chemical vapor deposition at low temperature (T<200°C), and anodic bonding on glass substrate. Inverted nanopyramids are fabricated by nanoimprint lithography and wet etching in alkaline solution. With 3μm-thick c-Si layers, the performances achieved with planar solar cells are Jsc = 18.3mA/cm2 and η = 6.1%. With an additional nanopyramid array on the front side of the cell, an improved short-circuit current of 25.3mA/cm2 is obtained. We present the latest experimental results and discuss the path to be followed to achieve low cost, ultrathin c-Si solar cells with a 15% targeted efficiency.

KW - Crystalline silicon

KW - epitaxial transfer

KW - light trapping

KW - nanoimprint lithography

KW - photovoltaic cells

KW - thin films

U2 - 10.1109/PVSC.2015.7356215

DO - 10.1109/PVSC.2015.7356215

M3 - Conference contribution

AN - SCOPUS:84961618486

T3 - 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

BT - 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015

Y2 - 14 June 2015 through 19 June 2015

ER -

Gaucher A, Cattoni A, Massiot I, Dupuis C, Chen W, Cariou R et al. Ultrathin nanostructured c-Si solar cells by low temperature and scalable processes. Dans 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7356215. (2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015). doi: 10.1109/PVSC.2015.7356215

Ultrathin nanostructured c-Si solar cells by low temperature and scalable processes

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SDG des Nations Unies

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