Ultraviolet-induced annealing of hydrogen bonds in silica films deposited at low temperatures

C. Debauche; C. Licoppe; J. Flicstein; O. Dulac; R. A.B. Devine

doi:10.1063/1.107920

Ultraviolet-induced annealing of hydrogen bonds in silica films deposited at low temperatures

C. Debauche
, C. Licoppe
, J. Flicstein
, O. Dulac
, R. A.B. Devine

Orange Labs
Centre National d'Etudes des Télécommuncations

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

12 Citations (Scopus)

Résumé

Exposure of photodeposited silica to ultraviolet irradiation with wavelengths comprised between 170 and 250 nm is shown to cause full removal of Si - H bonds. The photoreaction occurs at low temperatures (0-200°C) in the bulk of the films, is independent of the film thickness, and does not lead to the creation of dangling bonds. An important reaction path involves water groups in the silica films, while direct photolysis of Si - H bonds is ruled out.

langue originale	Anglais
Pages (de - à)	306-308
Nombre de pages	3
journal	Applied Physics Letters
Volume	61
Numéro de publication	3
Les DOIs	https://doi.org/10.1063/1.107920
état	Publié - 1 janv. 1992
Modification externe	Oui

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10.1063/1.107920

Contient cette citation

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title = "Ultraviolet-induced annealing of hydrogen bonds in silica films deposited at low temperatures",

abstract = "Exposure of photodeposited silica to ultraviolet irradiation with wavelengths comprised between 170 and 250 nm is shown to cause full removal of Si - H bonds. The photoreaction occurs at low temperatures (0-200°C) in the bulk of the films, is independent of the film thickness, and does not lead to the creation of dangling bonds. An important reaction path involves water groups in the silica films, while direct photolysis of Si - H bonds is ruled out.",

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AU - Debauche, C.

AU - Licoppe, C.

AU - Flicstein, J.

AU - Dulac, O.

AU - Devine, R. A.B.

PY - 1992/1/1

Y1 - 1992/1/1

N2 - Exposure of photodeposited silica to ultraviolet irradiation with wavelengths comprised between 170 and 250 nm is shown to cause full removal of Si - H bonds. The photoreaction occurs at low temperatures (0-200°C) in the bulk of the films, is independent of the film thickness, and does not lead to the creation of dangling bonds. An important reaction path involves water groups in the silica films, while direct photolysis of Si - H bonds is ruled out.

AB - Exposure of photodeposited silica to ultraviolet irradiation with wavelengths comprised between 170 and 250 nm is shown to cause full removal of Si - H bonds. The photoreaction occurs at low temperatures (0-200°C) in the bulk of the films, is independent of the film thickness, and does not lead to the creation of dangling bonds. An important reaction path involves water groups in the silica films, while direct photolysis of Si - H bonds is ruled out.

U2 - 10.1063/1.107920

DO - 10.1063/1.107920

M3 - Article

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EP - 308

JO - Applied Physics Letters

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Ultraviolet-induced annealing of hydrogen bonds in silica films deposited at low temperatures

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