Vacancy defects in GaAs and AlGaAs studied by positron spectroscopy under photoexcitation

K. Saarinen; J. Makinen; P. Hautojarvi; S. Kuisma; T. Laine; C. Corbel; C. LeBerre

Vacancy defects in GaAs and AlGaAs studied by positron spectroscopy under photoexcitation

K. Saarinen
, J. Makinen
, P. Hautojarvi
, S. Kuisma
, T. Laine
, C. Corbel
, C. LeBerre

Aalto University

Résultats de recherche: Contribution à un journal › Article de conférence › Revue par des pairs

Résumé

We show that positron spectroscopy under illumination can be used to study vacancy defects in excited charge states. In semi-insulating GaAs positrons reveal native Ga vacancies in the experiments in darkness. The photoelectron excitations under illumination change the charge state of the native As vacancies and convert them to effective positron traps. The experiments in the dark after illumination manifest the vacancy nature of the metastable centers EL2 and DX.

langue originale	Anglais
Pages (de - à)	501-504
Nombre de pages	4
journal	Materials Science Forum
Volume	175-178
Numéro de publication	pt 1
état	Publié - 1 janv. 1995
Modification externe	Oui
Evénement	Proceedings of the 10th International Conference on Positron Annihilation. Part 1 (of 2) - Beijing, China Durée: 23 mai 1994 → 29 mai 1994

Contient cette citation

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title = "Vacancy defects in GaAs and AlGaAs studied by positron spectroscopy under photoexcitation",

abstract = "We show that positron spectroscopy under illumination can be used to study vacancy defects in excited charge states. In semi-insulating GaAs positrons reveal native Ga vacancies in the experiments in darkness. The photoelectron excitations under illumination change the charge state of the native As vacancies and convert them to effective positron traps. The experiments in the dark after illumination manifest the vacancy nature of the metastable centers EL2 and DX.",

author = "K. Saarinen and J. Makinen and P. Hautojarvi and S. Kuisma and T. Laine and C. Corbel and C. LeBerre",

year = "1995",

month = jan,

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language = "English",

volume = "175-178",

pages = "501--504",

journal = "Materials Science Forum",

issn = "0255-5476",

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note = "Proceedings of the 10th International Conference on Positron Annihilation. Part 1 (of 2) ; Conference date: 23-05-1994 Through 29-05-1994",

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TY - JOUR

T1 - Vacancy defects in GaAs and AlGaAs studied by positron spectroscopy under photoexcitation

AU - Saarinen, K.

AU - Makinen, J.

AU - Hautojarvi, P.

AU - Kuisma, S.

AU - Laine, T.

AU - Corbel, C.

AU - LeBerre, C.

PY - 1995/1/1

Y1 - 1995/1/1

N2 - We show that positron spectroscopy under illumination can be used to study vacancy defects in excited charge states. In semi-insulating GaAs positrons reveal native Ga vacancies in the experiments in darkness. The photoelectron excitations under illumination change the charge state of the native As vacancies and convert them to effective positron traps. The experiments in the dark after illumination manifest the vacancy nature of the metastable centers EL2 and DX.

AB - We show that positron spectroscopy under illumination can be used to study vacancy defects in excited charge states. In semi-insulating GaAs positrons reveal native Ga vacancies in the experiments in darkness. The photoelectron excitations under illumination change the charge state of the native As vacancies and convert them to effective positron traps. The experiments in the dark after illumination manifest the vacancy nature of the metastable centers EL2 and DX.

M3 - Conference article

AN - SCOPUS:0029222137

SN - 0255-5476

VL - 175-178

SP - 501

EP - 504

JO - Materials Science Forum

JF - Materials Science Forum

IS - pt 1

T2 - Proceedings of the 10th International Conference on Positron Annihilation. Part 1 (of 2)

Y2 - 23 May 1994 through 29 May 1994

ER -

Vacancy defects in GaAs and AlGaAs studied by positron spectroscopy under photoexcitation

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