Very low surface recombination velocity of crystalline silicon passivated by phosphorus-doped a-SiCxNy:H(n) alloys

R. Ferre; A. Orpella; D. Munoz; I. Martín; F. Recart; C. Voz; J. Puigdollers; P. Roca i Cabarrocas; R. Alcubilla

doi:10.1002/pip.802

Very low surface recombination velocity of crystalline silicon passivated by phosphorus-doped a-SiC_xN_y:H(n) alloys

R. Ferre
, A. Orpella
, D. Munoz
, I. Martín
, F. Recart
, C. Voz
, J. Puigdollers
, P. Roca i Cabarrocas
, R. Alcubilla

Universidad Politecnica de Catalunia
University of the Basque Country

Résultats de recherche: Contribution à un journal › Article › Revue par des pairs

13 Citations (Scopus)

Résumé

Hydrogenated and phosphorus-doped amorphous silicon carbonitride films (a-SiC_xN_y:H(n)) were deposited by plasma-enhanced chemical vapor deposition (PECVD) on crystalline silicon surface in order to explore surface passivation properties. Very silicon-rich films yielded effective surface recombination velocities at 1 sun-illumination as low as 3cms ^-1 and 2cms^-1 on 1 Ω cm p- and n-type crystalline silicon substrates, respectively. In order to use them as anti-reflection coating, we increased alternatively either the carbon or nitrogen content of these films. Also, a combination of passivation and antireflective films was analyzed. Finally, we explored the passivation stability under high-temperature steps.

langue originale	Anglais
Pages (de - à)	123-127
Nombre de pages	5
journal	Progress in Photovoltaics: Research and Applications
Volume	16
Numéro de publication	2
Les DOIs	https://doi.org/10.1002/pip.802
état	Publié - 1 mars 2008

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Accès au document

10.1002/pip.802

Contient cette citation

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title = "Very low surface recombination velocity of crystalline silicon passivated by phosphorus-doped a-SiCxNy:H(n) alloys",

abstract = "Hydrogenated and phosphorus-doped amorphous silicon carbonitride films (a-SiCxNy:H(n)) were deposited by plasma-enhanced chemical vapor deposition (PECVD) on crystalline silicon surface in order to explore surface passivation properties. Very silicon-rich films yielded effective surface recombination velocities at 1 sun-illumination as low as 3cms -1 and 2cms-1 on 1 Ω cm p- and n-type crystalline silicon substrates, respectively. In order to use them as anti-reflection coating, we increased alternatively either the carbon or nitrogen content of these films. Also, a combination of passivation and antireflective films was analyzed. Finally, we explored the passivation stability under high-temperature steps.",

keywords = "Amorphous silicon, Antireflective, Crystalline solar cells, Passivation, Phosphorus doped, Silicon carbide, Thermal stress",

author = "R. Ferre and A. Orpella and D. Munoz and I. Mart{\'i}n and F. Recart and C. Voz and J. Puigdollers and \{Roca i Cabarrocas\}, P. and R. Alcubilla",

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T1 - Very low surface recombination velocity of crystalline silicon passivated by phosphorus-doped a-SiCxNy:H(n) alloys

AU - Ferre, R.

AU - Orpella, A.

AU - Munoz, D.

AU - Martín, I.

AU - Recart, F.

AU - Voz, C.

AU - Puigdollers, J.

AU - Roca i Cabarrocas, P.

AU - Alcubilla, R.

PY - 2008/3/1

Y1 - 2008/3/1

N2 - Hydrogenated and phosphorus-doped amorphous silicon carbonitride films (a-SiCxNy:H(n)) were deposited by plasma-enhanced chemical vapor deposition (PECVD) on crystalline silicon surface in order to explore surface passivation properties. Very silicon-rich films yielded effective surface recombination velocities at 1 sun-illumination as low as 3cms -1 and 2cms-1 on 1 Ω cm p- and n-type crystalline silicon substrates, respectively. In order to use them as anti-reflection coating, we increased alternatively either the carbon or nitrogen content of these films. Also, a combination of passivation and antireflective films was analyzed. Finally, we explored the passivation stability under high-temperature steps.

AB - Hydrogenated and phosphorus-doped amorphous silicon carbonitride films (a-SiCxNy:H(n)) were deposited by plasma-enhanced chemical vapor deposition (PECVD) on crystalline silicon surface in order to explore surface passivation properties. Very silicon-rich films yielded effective surface recombination velocities at 1 sun-illumination as low as 3cms -1 and 2cms-1 on 1 Ω cm p- and n-type crystalline silicon substrates, respectively. In order to use them as anti-reflection coating, we increased alternatively either the carbon or nitrogen content of these films. Also, a combination of passivation and antireflective films was analyzed. Finally, we explored the passivation stability under high-temperature steps.

KW - Amorphous silicon

KW - Antireflective

KW - Crystalline solar cells

KW - Passivation

KW - Phosphorus doped

KW - Silicon carbide

KW - Thermal stress

U2 - 10.1002/pip.802

DO - 10.1002/pip.802

M3 - Article

AN - SCOPUS:41049113108

SN - 1062-7995

VL - 16

SP - 123

EP - 127

JO - Progress in Photovoltaics: Research and Applications

JF - Progress in Photovoltaics: Research and Applications

IS - 2