Résumé
The electronic transport properties and the microstructure of a series of hydrogenated polymorphous silicon (pm-Si:H) samples prepared under different conditions have been studied. Hydrogen bonding and transport properties have been linked: to exhibit good transport properties the material has to present a peculiar microstructure revealed by the hydrogen bonding. However, the hydrogen bonding and/or content in this structure has to be adjusted via the deposition conditions to reach an optimum hydrogen incorporation leading to the best layer and the best solar cell device.
| langue originale | Anglais |
|---|---|
| Pages (de - à) | 241-246 |
| Nombre de pages | 6 |
| journal | Thin Solid Films |
| Volume | 427 |
| Numéro de publication | 1-2 |
| Les DOIs | |
| état | Publié - 3 mars 2003 |
| Evénement | E-MRS, K - Strasbourg, France Durée: 18 juin 2003 → 21 juin 2003 |
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