X-ray qualification of hydrogenated amorphous silicon sensors on flexible substrate

M. Menichelli; L. Antognini; A. Bashiri; M. Bizzarri; L. Calcagnile; M. Caprai; A. P. Caricato; R. Catalano; G. A.P. Cirrone; T. Croci; G. Cuttone; S. Dunand; M. Fabi; L. Frontini; C. Grimani; M. Ionica; K. Kanxheri; M. Large; V. Liberali; M. Martino; G. Maruccio; G. Mazza; A. G. Monteduro; A. Morozzi; F. Moscatelli; S. Pallotta; A. Papi; D. Passeri; M. Pedio; M. Petasecca; G. Petringa; F. Peverini; L. Piccolo; P. Placidi; G. Quarta; S. Rizzato; G. Rossi; F. Sabbatini; A. Stabile; L. Servoli; C. Talamonti; L. Tosti; M. Villani; R. J. Wheadon; N. Wyrsch; N. Zema

doi:10.1109/IWASI58316.2023.10164611

X-ray qualification of hydrogenated amorphous silicon sensors on flexible substrate

M. Menichelli
, L. Antognini
, A. Bashiri
, M. Bizzarri
, L. Calcagnile
, M. Caprai
, A. P. Caricato
, R. Catalano
, G. A.P. Cirrone
, T. Croci
, G. Cuttone
, S. Dunand
, M. Fabi
, L. Frontini
, C. Grimani
, M. Ionica
, K. Kanxheri
, M. Large
, V. Liberali
, M. Martino

G. Maruccio, G. Mazza, A. G. Monteduro, A. Morozzi, F. Moscatelli, S. Pallotta, A. Papi, D. Passeri, M. Pedio, M. Petasecca, G. Petringa, F. Peverini, L. Piccolo, P. Placidi, G. Quarta, S. Rizzato, G. Rossi, F. Sabbatini, A. Stabile, L. Servoli, C. Talamonti, L. Tosti, M. Villani, R. J. Wheadon, N. Wyrsch, N. Zema

INFN Sezione di Perugia
Azienda ospedaliera S.Maria
INFN Sezione di Torino
Institute of Electrical and Microengineering (IME)
University of Wollongong
University of Perugia
University of Salento
INFN-LNS
Istituto Nazionale di Fisica Nucleare, Sezione di Firenze
University of Urbino Carlo Bo
Sezione INFN di Milano
Ev-K2-CNR Committee
Dipartimento di Fisica Scienze Biomediche sperimentali e Cliniche Mario Serio
Consiglio Nazionale delle Ricerche

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Contribution à une conférence › Revue par des pairs

Résumé

Hydrogenated amorphous silicon (a-Si:H) is a well known material for its radiation resistance and for the possibility of deposition on flexible substrates like Polyimide (PI), polyethylene terephthalate (PET) or polyethylene naphthalate (PEN). Due to the properties of a-Si:H its usage for dosimetry, beam monitoring for particle physics and nuclear medicine, as well as, radiation flux measurement for space applications and neutron flux measurement can be foreseen. In this paper the dosimetric X-ray response of p-i-n diodes deposited on Polyimide will be studied. In particular we will study the linearity of the photocurrent response to X-rays versus dose-rate from which we will extract the dosimetric sensitivity at various bias voltages. We will repeat this study for devices having two different areas (2 mm x 2 mm and 5 mm x 5 mm) also a measurement of stability of X-ray response versus time will be shown.

langue originale	Anglais
titre	Proceedings - 2023 9th International Workshop on Advances in Sensors and Interfaces, IWASI 2023
Editeur	Institute of Electrical and Electronics Engineers Inc.
Pages	190-193
Nombre de pages	4
ISBN (Electronique)	9798350336948
Les DOIs	https://doi.org/10.1109/IWASI58316.2023.10164611
état	Publié - 1 janv. 2023
Modification externe	Oui
Evénement	9th IEEE International Workshop on Advances in Sensors and Interfaces, IWASI 2023 - Monopoli, Italie Durée: 8 juin 2023 → 9 juin 2023

Série de publications

Nom	Proceedings - 2023 9th International Workshop on Advances in Sensors and Interfaces, IWASI 2023

Une conférence

Une conférence	9th IEEE International Workshop on Advances in Sensors and Interfaces, IWASI 2023
Pays/Territoire	Italie
La ville	Monopoli
période	8/06/23 → 9/06/23

SDG des Nations Unies

Ce résultat contribue à ou aux Objectifs de développement durable suivants

SDG 3 Bonne santé et bien-être

Accès au document

10.1109/IWASI58316.2023.10164611

Contient cette citation

Menichelli, M., Antognini, L., Bashiri, A., Bizzarri, M., Calcagnile, L., Caprai, M., Caricato, A. P., Catalano, R., Cirrone, G. A. P., Croci, T., Cuttone, G., Dunand, S., Fabi, M., Frontini, L., Grimani, C., Ionica, M., Kanxheri, K., Large, M., Liberali, V., ... Zema, N. (2023). X-ray qualification of hydrogenated amorphous silicon sensors on flexible substrate. Dans Proceedings - 2023 9th International Workshop on Advances in Sensors and Interfaces, IWASI 2023 (p. 190-193). (Proceedings - 2023 9th International Workshop on Advances in Sensors and Interfaces, IWASI 2023). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IWASI58316.2023.10164611

Menichelli, M. ; Antognini, L. ; Bashiri, A. et al. / X-ray qualification of hydrogenated amorphous silicon sensors on flexible substrate. Proceedings - 2023 9th International Workshop on Advances in Sensors and Interfaces, IWASI 2023. Institute of Electrical and Electronics Engineers Inc., 2023. p. 190-193 (Proceedings - 2023 9th International Workshop on Advances in Sensors and Interfaces, IWASI 2023).

@inproceedings{99a9f7833c86418a8f9f3db0e8842f36,

title = "X-ray qualification of hydrogenated amorphous silicon sensors on flexible substrate",

abstract = "Hydrogenated amorphous silicon (a-Si:H) is a well known material for its radiation resistance and for the possibility of deposition on flexible substrates like Polyimide (PI), polyethylene terephthalate (PET) or polyethylene naphthalate (PEN). Due to the properties of a-Si:H its usage for dosimetry, beam monitoring for particle physics and nuclear medicine, as well as, radiation flux measurement for space applications and neutron flux measurement can be foreseen. In this paper the dosimetric X-ray response of p-i-n diodes deposited on Polyimide will be studied. In particular we will study the linearity of the photocurrent response to X-rays versus dose-rate from which we will extract the dosimetric sensitivity at various bias voltages. We will repeat this study for devices having two different areas (2 mm x 2 mm and 5 mm x 5 mm) also a measurement of stability of X-ray response versus time will be shown.",

keywords = "Flexible detectors., Hydrogenated Silicon detectors, Radiation Hardness",

author = "M. Menichelli and L. Antognini and A. Bashiri and M. Bizzarri and L. Calcagnile and M. Caprai and Caricato, \{A. P.\} and R. Catalano and Cirrone, \{G. A.P.\} and T. Croci and G. Cuttone and S. Dunand and M. Fabi and L. Frontini and C. Grimani and M. Ionica and K. Kanxheri and M. Large and V. Liberali and M. Martino and G. Maruccio and G. Mazza and Monteduro, \{A. G.\} and A. Morozzi and F. Moscatelli and S. Pallotta and A. Papi and D. Passeri and M. Pedio and M. Petasecca and G. Petringa and F. Peverini and L. Piccolo and P. Placidi and G. Quarta and S. Rizzato and G. Rossi and F. Sabbatini and A. Stabile and L. Servoli and C. Talamonti and L. Tosti and M. Villani and Wheadon, \{R. J.\} and N. Wyrsch and N. Zema",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 9th IEEE International Workshop on Advances in Sensors and Interfaces, IWASI 2023 ; Conference date: 08-06-2023 Through 09-06-2023",

year = "2023",

month = jan,

day = "1",

doi = "10.1109/IWASI58316.2023.10164611",

language = "English",

series = "Proceedings - 2023 9th International Workshop on Advances in Sensors and Interfaces, IWASI 2023",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "190--193",

booktitle = "Proceedings - 2023 9th International Workshop on Advances in Sensors and Interfaces, IWASI 2023",

}

Menichelli, M, Antognini, L, Bashiri, A, Bizzarri, M, Calcagnile, L, Caprai, M, Caricato, AP, Catalano, R, Cirrone, GAP, Croci, T, Cuttone, G, Dunand, S, Fabi, M, Frontini, L, Grimani, C, Ionica, M, Kanxheri, K, Large, M, Liberali, V, Martino, M, Maruccio, G, Mazza, G, Monteduro, AG, Morozzi, A, Moscatelli, F, Pallotta, S, Papi, A, Passeri, D, Pedio, M, Petasecca, M, Petringa, G, Peverini, F, Piccolo, L, Placidi, P, Quarta, G, Rizzato, S, Rossi, G, Sabbatini, F, Stabile, A, Servoli, L, Talamonti, C, Tosti, L, Villani, M, Wheadon, RJ, Wyrsch, N & Zema, N 2023, X-ray qualification of hydrogenated amorphous silicon sensors on flexible substrate. Dans Proceedings - 2023 9th International Workshop on Advances in Sensors and Interfaces, IWASI 2023. Proceedings - 2023 9th International Workshop on Advances in Sensors and Interfaces, IWASI 2023, Institute of Electrical and Electronics Engineers Inc., p. 190-193, 9th IEEE International Workshop on Advances in Sensors and Interfaces, IWASI 2023, Monopoli, Italie, 8/06/23. https://doi.org/10.1109/IWASI58316.2023.10164611

X-ray qualification of hydrogenated amorphous silicon sensors on flexible substrate. / Menichelli, M.; Antognini, L.; Bashiri, A. et al.
Proceedings - 2023 9th International Workshop on Advances in Sensors and Interfaces, IWASI 2023. Institute of Electrical and Electronics Engineers Inc., 2023. p. 190-193 (Proceedings - 2023 9th International Workshop on Advances in Sensors and Interfaces, IWASI 2023).

Résultats de recherche: Le chapitre dans un livre, un rapport, une anthologie ou une collection › Contribution à une conférence › Revue par des pairs

TY - GEN

T1 - X-ray qualification of hydrogenated amorphous silicon sensors on flexible substrate

AU - Menichelli, M.

AU - Antognini, L.

AU - Bashiri, A.

AU - Bizzarri, M.

AU - Calcagnile, L.

AU - Caprai, M.

AU - Caricato, A. P.

AU - Catalano, R.

AU - Cirrone, G. A.P.

AU - Croci, T.

AU - Cuttone, G.

AU - Dunand, S.

AU - Fabi, M.

AU - Frontini, L.

AU - Grimani, C.

AU - Ionica, M.

AU - Kanxheri, K.

AU - Large, M.

AU - Liberali, V.

AU - Martino, M.

AU - Maruccio, G.

AU - Mazza, G.

AU - Monteduro, A. G.

AU - Morozzi, A.

AU - Moscatelli, F.

AU - Pallotta, S.

AU - Papi, A.

AU - Passeri, D.

AU - Pedio, M.

AU - Petasecca, M.

AU - Petringa, G.

AU - Peverini, F.

AU - Piccolo, L.

AU - Placidi, P.

AU - Quarta, G.

AU - Rizzato, S.

AU - Rossi, G.

AU - Sabbatini, F.

AU - Stabile, A.

AU - Servoli, L.

AU - Talamonti, C.

AU - Tosti, L.

AU - Villani, M.

AU - Wheadon, R. J.

AU - Wyrsch, N.

AU - Zema, N.

PY - 2023/1/1

Y1 - 2023/1/1

N2 - Hydrogenated amorphous silicon (a-Si:H) is a well known material for its radiation resistance and for the possibility of deposition on flexible substrates like Polyimide (PI), polyethylene terephthalate (PET) or polyethylene naphthalate (PEN). Due to the properties of a-Si:H its usage for dosimetry, beam monitoring for particle physics and nuclear medicine, as well as, radiation flux measurement for space applications and neutron flux measurement can be foreseen. In this paper the dosimetric X-ray response of p-i-n diodes deposited on Polyimide will be studied. In particular we will study the linearity of the photocurrent response to X-rays versus dose-rate from which we will extract the dosimetric sensitivity at various bias voltages. We will repeat this study for devices having two different areas (2 mm x 2 mm and 5 mm x 5 mm) also a measurement of stability of X-ray response versus time will be shown.

AB - Hydrogenated amorphous silicon (a-Si:H) is a well known material for its radiation resistance and for the possibility of deposition on flexible substrates like Polyimide (PI), polyethylene terephthalate (PET) or polyethylene naphthalate (PEN). Due to the properties of a-Si:H its usage for dosimetry, beam monitoring for particle physics and nuclear medicine, as well as, radiation flux measurement for space applications and neutron flux measurement can be foreseen. In this paper the dosimetric X-ray response of p-i-n diodes deposited on Polyimide will be studied. In particular we will study the linearity of the photocurrent response to X-rays versus dose-rate from which we will extract the dosimetric sensitivity at various bias voltages. We will repeat this study for devices having two different areas (2 mm x 2 mm and 5 mm x 5 mm) also a measurement of stability of X-ray response versus time will be shown.

KW - Flexible detectors.

KW - Hydrogenated Silicon detectors

KW - Radiation Hardness

U2 - 10.1109/IWASI58316.2023.10164611

DO - 10.1109/IWASI58316.2023.10164611

M3 - Conference contribution

AN - SCOPUS:85165792727

T3 - Proceedings - 2023 9th International Workshop on Advances in Sensors and Interfaces, IWASI 2023

SP - 190

EP - 193

BT - Proceedings - 2023 9th International Workshop on Advances in Sensors and Interfaces, IWASI 2023

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 9th IEEE International Workshop on Advances in Sensors and Interfaces, IWASI 2023

Y2 - 8 June 2023 through 9 June 2023

ER -

Menichelli M, Antognini L, Bashiri A, Bizzarri M, Calcagnile L, Caprai M et al. X-ray qualification of hydrogenated amorphous silicon sensors on flexible substrate. Dans Proceedings - 2023 9th International Workshop on Advances in Sensors and Interfaces, IWASI 2023. Institute of Electrical and Electronics Engineers Inc. 2023. p. 190-193. (Proceedings - 2023 9th International Workshop on Advances in Sensors and Interfaces, IWASI 2023). doi: 10.1109/IWASI58316.2023.10164611

X-ray qualification of hydrogenated amorphous silicon sensors on flexible substrate

Résumé

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Une conférence

SDG des Nations Unies

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